OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DMN3730U-7

P1-P3P4-P6P7-P7
DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
4 of 7
www.diodes.com
July 2011
© Diodes Incorporated
DMN3730U
A
Product Line o
f
Diodes Incorporated
01 2 345
Fig. 4 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
0.5
1.0
1.5
2.0
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 10V
GS
0
0.5
1.0
1.5
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
2.0
00.511.52 2.53
Fig. 5 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0 0.4 0.8 1.2 1.6 2
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
0
0.2
0.4
0.6
0.8
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
0 0.25 0.5 0.75 1 1.25 1.5
I , DRAIN CURRENT (A)
D
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
0
0.2
0.4
0.6
0.8
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 8 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DSON
V = 4.5V
I = 1.0A
GS
D
V = 2.5V
I = 500mA
GS
D
Fig. 9 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DSON
Ω
V = 4.5V
I = 1.0A
GS
D
V = 2.5V
I = 500mA
GS
D
DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
5 of 7
www.diodes.com
July 2011
© Diodes Incorporated
DMN3730U
A
Product Line o
f
Diodes Incorporated
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.
2
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0 0.2 0.4 0.6 0.8 1 1.2
Fig. 11 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
0
0.4
0.8
1.2
1.6
2.0
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
0 5 10 15 20 25 30
Fig. 12 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
C
,
C
A
P
A
C
IT
A
N
C
E (p
F
)
C
iss
C
rss
C
oss
f = 1MHz
1
10
100
1,000
10,000
0 5 10 15 20 25 30
Fig. 13 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
2
4
6
8
0 0.5 1 1.5 2 2.5 3
Fig. 14 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOLTAGE (V)
GS
V = 15V
I = 1A
DS
D
DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
6 of 7
www.diodes.com
July 2011
© Diodes Incorporated
DMN3730U
A
Product Line o
f
Diodes Incorporated
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α
0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
J
L
D
F
B
C
H
K
G
K1
X
E
Y
C
Z
P1-P3P4-P6P7-P7

DMN3730U-7

Mfr. #:
Buy DMN3730U-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS: 25V-30 SOT23,3K
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet