T2G6000528-Q3

T2G6000528-Q3
Mfr. #:
T2G6000528-Q3
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
Lifecycle:
New from this manufacturer.
Datasheet:
T2G6000528-Q3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
T2G6000528-Q3 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
15 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
-
Vgs - Gate-Source Breakdown Voltage:
-
Id - Continuous Drain Current:
650 mA
Output Power:
10 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
-
Maximum Operating Temperature:
-
Pd - Power Dissipation:
12.5 W
Mounting Style:
SMD/SMT
Packaging:
Tray
Application:
Military Radar, Professional and Military Radio Communications
Configuration:
Single
Operating Frequency:
DC to 6 GHz
Series:
T2G
Brand:
Qorvo
Forward Transconductance - Min:
-
Development Kit:
T2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
100
Subcategory:
Transistors
Part # Aliases:
1099997
Tags
T2G6000528-Q, T2G6000, T2G6, T2G
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 6 GHz, 10W, 13.5 dB, 28 V, GaN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
T2G6000528-Q3
DISTI # 772-T2G6000528-Q3
QorvoRF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
RoHS: Compliant
291
  • 1:$80.4000
  • 25:$68.0500
  • 100:$57.6000
T2G6000528-Q3 28V
DISTI # 772-T2G6000528-Q328V
QorvoRF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
RoHS: Compliant
75
  • 1:$80.4000
  • 25:$68.0500
  • 100:$57.6000
T2G6000528-Q3EVB3
DISTI # 772-T2G6000528-Q3EV
QorvoRF Development Tools 3-3.3GHz Eval Board
RoHS: Compliant
2
  • 1:$875.0000
T2G6000528-Q3, EVAL BOARD
DISTI # 772-T2G6000528-Q3EB
QorvoRF Development Tools DC-6.0GHz 10 Watt 28V GaN Eval Brd
RoHS: Compliant
0
  • 1:$875.0000
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Availability
Stock:
236
On Order:
2219
Enter Quantity:
Current price of T2G6000528-Q3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$80.40
$80.40
25
$68.05
$1 701.25
100
$57.60
$5 760.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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