T2G6000

T2G6000528-Q3 vs T2G6000528-Q3 28V vs T2G6000528-Q3, EVAL BOAR

 
PartNumberT2G6000528-Q3T2G6000528-Q3 28VT2G6000528-Q3, EVAL BOAR
DescriptionRF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHzRF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
ManufacturerQorvoQorvo-
Product CategoryRF JFET TransistorsRF JFET Transistors-
RoHSYY-
Transistor TypeHEMTHEMT-
TechnologyGaN SiCGaN SiC-
Gain15 dB--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage---
Vgs Gate Source Breakdown Voltage---
Id Continuous Drain Current650 mA--
Output Power10 W--
Maximum Drain Gate Voltage---
Minimum Operating Temperature---
Maximum Operating Temperature---
Pd Power Dissipation12.5 W--
Mounting StyleSMD/SMT--
PackagingTrayTray-
ApplicationMilitary Radar, Professional and Military Radio Communications--
ConfigurationSingle--
Operating FrequencyDC to 6 GHz--
SeriesT2GT2G-
BrandQorvoQorvo-
Forward Transconductance Min---
Development KitT2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5--
Moisture SensitiveYesYes-
Product TypeRF JFET TransistorsRF JFET Transistors-
Factory Pack Quantity100100-
SubcategoryTransistorsTransistors-
Part # Aliases10999971099997-
Manufacturer Part # Description RFQ
Qorvo
Qorvo
T2G6000528-Q3 RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
T2G6000528-Q3 28V RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
T2G6000528-Q3 28V RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
T2G6000528-Q3 RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
T2G6000528-Q3, EVAL BOAR New and Original
T2G6000528-Q3-EVB3 3.0-3 New and Original
T2G6000528-XCC-1-Q3 New and Original
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