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BSZ042N06NSATMA1

BSZ042N06NSATMA1
Mfr. #:
BSZ042N06NSATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 40A TDSON-8
Lifecycle:
New from this manufacturer.
Datasheet:
BSZ042N06NSATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSZ042N06NSATMA1 DatasheetBSZ042N06NSATMA1 Datasheet (P4-P6)BSZ042N06NSATMA1 Datasheet (P7-P9)
ECAD Model:
More Information:
BSZ042N06NSATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TSDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
4.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.1 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
27 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
69 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.1 mm
Length:
3.3 mm
Series:
OptiMOS 5
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
27 S
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
7 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
19 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
BSZ042N06NS BSZ42N6NSXT SP000917418
Tags
BSZ042N06, BSZ042, BSZ04, BSZ0, BSZ
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 4.2 mOhm 27 nC OptiMOS™ Power Mosfet - TSDSON-8 FL
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TSDSON-8, RoHS
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Part # Mfg. Description Stock Price
BSZ042N06NSATMA1
DISTI # V72:2272_06383953		Infineon Technologies AGTrans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R
RoHS: Compliant		1455
  • 75000:$0.6981
  • 30000:$0.7080
  • 15000:$0.7178
  • 6000:$0.7277
  • 3000:$0.7376
  • 1000:$0.8195
  • 500:$1.0370
  • 250:$1.1476
  • 100:$1.2074
  • 50:$1.2174
  • 25:$1.3527
  • 10:$1.5028
  • 1:$1.9511
BSZ042N06NSATMA1
DISTI # BSZ042N06NSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 19A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		19422In Stock
  • 1000:$0.7947
  • 500:$0.9592
  • 100:$1.1675
  • 10:$1.4520
  • 1:$1.6200
BSZ042N06NSATMA1
DISTI # BSZ042N06NSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 19A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		19422In Stock
  • 1000:$0.7947
  • 500:$0.9592
  • 100:$1.1675
  • 10:$1.4520
  • 1:$1.6200
BSZ042N06NSATMA1
DISTI # BSZ042N06NSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 19A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		10000In Stock
  • 10000:$0.6740
  • 5000:$0.6918
BSZ042N06NSATMA1
DISTI # 32682038		Infineon Technologies AGTrans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R
RoHS: Compliant		1455
  • 9:$1.9511
BSZ042N06NSATMA1
DISTI # BSZ042N06NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 40A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ042N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 5000
  • 50000:$0.6429
  • 30000:$0.6549
  • 20000:$0.6779
  • 10000:$0.7029
  • 5000:$0.7299
BSZ042N06NSATMA1
DISTI # SP000917418		Infineon Technologies AGTrans MOSFET N-CH 60V 40A 8-Pin TSDSON T/R (Alt: SP000917418)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 315015
  • 50000:€0.6469
  • 30000:€0.6899
  • 20000:€0.7579
  • 10000:€0.8489
  • 5000:€1.0879
BSZ042N06NSATMA1
DISTI # 47Y8008		Infineon Technologies AGMOSFET, N-CH, 60V, 40A, 150DEG C, 69W,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
  • 1000:$0.7420
  • 500:$0.8960
  • 250:$0.9580
  • 100:$1.0200
  • 50:$1.1000
  • 25:$1.1900
  • 10:$1.2700
  • 1:$1.5000
BSZ042N06NSATMA1
DISTI # 726-BSZ042N06NSATMA1		Infineon Technologies AGMOSFET N-Ch 60V 40A TDSON-8
RoHS: Compliant		15771
  • 1:$1.4900
  • 10:$1.2600
  • 100:$1.0100
  • 500:$0.8870
  • 1000:$0.7350
  • 2500:$0.6850
  • 5000:$0.6590
  • 10000:$0.6340
BSZ042N06NS
DISTI # 726-BSZ042N06NS		Infineon Technologies AGMOSFET N-Ch 60V 40A TDSON-8
RoHS: Compliant		10041
  • 1:$1.4900
  • 10:$1.2600
  • 100:$1.0100
  • 500:$0.8870
  • 1000:$0.7350
  • 2500:$0.6850
  • 5000:$0.6590
  • 10000:$0.6340
BSZ042N06NSATMA1
DISTI # 9064390P		Infineon Technologies AGMOSFET N-CHANNEL 60V 40A OPTIMOS TSDSON8, RL5100
  • 2500:£0.5310
  • 1000:£0.5450
  • 500:£0.6550
  • 100:£0.7430
BSZ042N06NSATMA1
DISTI # 2443426		Infineon Technologies AGMOSFET, N CH, 60V, 40A, TSDSON-8
RoHS: Compliant		77626
  • 2500:$1.0600
  • 1000:$1.1400
  • 500:$1.3700
  • 100:$1.5600
  • 10:$1.9400
  • 1:$2.3000
BSZ042N06NSATMA1
DISTI # XSKDRABV0052002		Infineon Technologies AG 
RoHS: Compliant		210015 in Stock0 on Order
  • 210015:$0.8707
  • 5000:$0.9329
BSZ042N06NSATMA1
DISTI # 2443426		Infineon Technologies AGMOSFET, N CH, 60V, 40A, TSDSON-852090
  • 500:£0.6910
  • 250:£0.7390
  • 100:£0.7860
  • 10:£1.0300
  • 1:£1.3300
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Availability
Stock:
15
On Order:
1998
Enter Quantity:
Current price of BSZ042N06NSATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.49
$1.49
10
$1.26
$12.60
100
$1.01
$101.00
500
$0.89
$443.50
1000
$0.74
$735.00
2500
$0.68
$1 712.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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