PartNumber | BSZ040N06LS5ATMA1 | BSZ040N04LSGATMA1 | BSZ040N04LS G |
Description | MOSFET MV POWER MOS | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSDSON-8 | PG-TSDSON-8 | TSDSON-8 |
Packaging | Reel | Reel | Reel |
Height | 1.1 mm | 1.1 mm | 1.1 mm |
Length | 3.3 mm | 3.3 mm | 3.3 mm |
Width | 3.3 mm | 3.3 mm | 3.3 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | BSZ040N06LS5 SP001385578 | BSZ040N04LS BSZ4N4LSGXT G SP000388295 | BSZ040N04LSGATMA1 BSZ4N4LSGXT SP000388295 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 40 V | 40 V |
Id Continuous Drain Current | - | 40 A | 40 A |
Rds On Drain Source Resistance | - | 4 mOhms | 3.3 mOhms |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | 1.2 V |
Vgs Gate Source Voltage | - | 10 V | 20 V |
Qg Gate Charge | - | 48 nC | 64 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 69 W | 69 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Tradename | - | OptiMOS | OptiMOS |
Series | - | OptiMOS 3 | OptiMOS 3 |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Forward Transconductance Min | - | 40 S | 40 S |
Fall Time | - | 5.4 ns | 5.4 ns |
Rise Time | - | 4.8 ns | 4.8 ns |
Typical Turn Off Delay Time | - | 33 ns | 33 ns |
Typical Turn On Delay Time | - | 8.5 ns | 8.5 ns |
Unit Weight | - | 0.004030 oz | 0.003527 oz |