APT12M80B

APT12M80B
Mfr. #:
APT12M80B
Manufacturer:
Microchip / Microsemi
Description:
MOSFET FG, MOSFET, 800V, TO-247
Lifecycle:
New from this manufacturer.
Datasheet:
APT12M80B Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT12M80B DatasheetAPT12M80B Datasheet (P4)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Microchip
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
13 A
Rds On - Drain-Source Resistance:
800 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
80 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
335 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Brand:
Microchip / Microsemi
Forward Transconductance - Min:
11 S
Fall Time:
18 ns
Product Type:
MOSFET
Rise Time:
20 ns
Factory Pack Quantity:
1
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
60 ns
Typical Turn-On Delay Time:
14 ns
Unit Weight:
0.229281 oz
Tags
APT12, APT1, APT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 800V 13A 3-Pin(3+Tab) TO-247 Tube
***rochip
MOSFET MOS8 800 V 12 A TO-247
***hardson RFPD
POWER MOSFET TRANSISTOR
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
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Availability
Stock:
40
On Order:
2023
Enter Quantity:
Current price of APT12M80B is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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