DMP31D0U-7

Mfr. #:: DMP31D0U-7
Manufacturer:: Diodes Incorporated
Description:: MOSFET 30V P-Ch ENH Mode FET -30Vdss 8V 2.5A
Lifecycle:: New from this manufacturer.
Datasheet:: DMP31D0U-7 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Diodes Incorporated

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-23-3

Packaging:: Reel

Series:: DMP31

Brand:: Diodes Incorporated

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Unit Weight:: 0.000282 oz

Tags: DMP31D0U, DMP31D, DMP31, DMP3, DMP

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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DMP31D0U-7 Description

***ure Electronics: P-Channel 30 V 530 mA 1 Ohm Surface Mount Enhancement Mode Mosfet - SOT-23

***ark: Mosfet, P-Ch, 30V, 0.67A, Sot-23 Rohs Compliant: Yes

***(Formerly Allied Electronics): MOSFET P-Ch 30V 0.67A Enhancement SOT23

***des Inc SCT: P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 8±V VGS

***Yang: Trans MOSFET P-CH 25V 0.46A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled

***id Electronics: Transistor MOSFET P-Ch. -0,46A/-25V SOT23 FDV 304 P

***enic: 25V 460mA 1.1´Î@4.5V500mA 350mW 1.5V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ure Electronics: P-Channel 25 V 1.5 Ohm Surface Mount Digital FET - SOT-23-3

***r Electronics: Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

***rchild Semiconductor: This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -460 / Drain-Source Voltage (Vds) V = -25 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = -8 / Fall Time ns = 35 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350

***Yang: Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled

***enic: 25V 680mA 450m¦¸@4.5V,500mA 350mW 1.5V@250¦ÌA N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***et Europe: Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R

***ure Electronics: N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SOT-23-3

***nell: MOSFET, N DIGITAL SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 680mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: -; Power Dissip

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 680 / Drain-Source Voltage (Vds) V = 25 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 8 / Fall Time ns = 13 / Rise Time ns = 8.5 / Turn-OFF Delay Time ns = 17 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350

***rchild Semiconductor: These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

***ure Electronics: N-Channel 30 V 460 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3

***ical: Trans MOSFET N-CH 30V 0.94A Automotive 3-Pin SOT-23 T/R

***nell: MOSFET, N-CH, 30V, 0.75A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 750mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.46ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 950mV; Power Dissipation Pd: 710mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***eco: Transistor MOSFET P-Channel 25V 125mA 350mW Surface Mount SOT-23

***enic: 25V 120mA 10´Î@4.5V200mA 350mW 1.5V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***trelec: MOSFET Operating temperature: -55...+150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 350 mW

***rchild Semiconductor: This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series.

***ment14 APAC: MOSFET, P, DIGITAL, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:120mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):13ohm; Rds(on) Test Voltage Vgs:2.7V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:120mA; Current Temperature:25°C; ESD HBM:6kV; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Pd:350mW; Pulse Current Idm:500mA; SMD Marking:302P; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-25V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V

***ure Electronics: N-Channel 30 V 28 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3

***ical: Trans MOSFET N-CH 30V 5.8A Automotive 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Source Voltage Vds:30V; On Resistance

***nell: MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 5.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V

***ure Electronics: Single N-Channel 30 V 160 mOhm 0.6 nC OptiMOS Small Signal Mosfet - SOT-23

***p One Stop Global: Trans MOSFET N-CH 30V 1.4A Automotive 3-Pin SOT-23 T/R

***el Electronic: 30V 1.4A 500mW 160mΩ@10V,1.4A 1.2V@3.7uA N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.4 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 160 / Gate-Source Voltage V = 20 / Fall Time ns = 1 / Rise Time ns = 2.3 / Turn-OFF Delay Time ns = 5.8 / Turn-ON Delay Time ns = 3.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

Market price

Part #	Mfg.	Description	Stock	Price
DMP31D0U-7 DISTI # V72:2272_06697838	Zetex / Diodes Inc	Trans MOSFET P-CH 30V 0.67A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	3084	3000:$0.1175 1000:$0.1335 500:$0.1630 250:$0.1801 100:$0.2104 25:$0.3079 10:$0.3236 1:$0.4638
DMP31D0U-7 DISTI # DMP31D0U-7DICT-ND	Diodes Incorporated	MOSFET P-CH 30V 530MA SOT23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	16667In Stock	1000:$0.1133 500:$0.1473 100:$0.2493 10:$0.3800 1:$0.5400
DMP31D0U-7 DISTI # DMP31D0U-7DIDKR-ND	Diodes Incorporated	MOSFET P-CH 30V 530MA SOT23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	16667In Stock	1000:$0.1133 500:$0.1473 100:$0.2493 10:$0.3800 1:$0.5400
DMP31D0U-7 DISTI # DMP31D0U-7DITR-ND	Diodes Incorporated	MOSFET P-CH 30V 530MA SOT23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	15000In Stock	3000:$0.0990
DMP31D0U-7 DISTI # 25756486	Zetex / Diodes Inc	Trans MOSFET P-CH 30V 0.67A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	3084	3000:$0.1181 1000:$0.1340 500:$0.1634 250:$0.1807 100:$0.2118 91:$0.3088
DMP31D0U-7 DISTI # DMP31D0U-7	Diodes Incorporated	Trans MOSFET P-CH 30V 0.67A 3-Pin SOT-23 T/R - Tape and Reel (Alt: DMP31D0U-7) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0669 6000:$0.0639 12000:$0.0609 18000:$0.0579 30000:$0.0569
DMP31D0U-7 DISTI # 70550889	Diodes Incorporated	MOSFET P-Ch 30V 0.67A Enhancement SOT23 RoHS: Compliant	0	250:$0.1700 500:$0.1240 1250:$0.1080 2500:$0.0990
DMP31D0U-7 DISTI # 621-DMP31D0U-7	Diodes Incorporated	MOSFET 30V P-Ch ENH Mode FET -30Vdss 8V 2.5A RoHS: Compliant	0	3000:$0.0860
DMP31D0U-7 DISTI # 8270507P	Zetex / Diodes Inc	MOSFET P-CH 30V 0.67A ENHANCEMENT SOT23, RL	2000	500:£0.0810 1250:£0.0720 5000:£0.0620
DMP31D0U-7 DISTI # C1S205700598835	Diodes Incorporated	MOSFETs RoHS: Compliant	3084	250:$0.1807 100:$0.2118 25:$0.3088

Image	Part #	Description
	Mfr.#: DMP31D0UFB4-7B OMO.#: OMO-DMP31D0UFB4-7B	MOSFET MOSFET BVDSS: 25V-30 X2-DFN1006-3 T&R 10K
	Mfr.#: DMP3165L-7 OMO.#: OMO-DMP3165L-7	MOSFET MOSFET BVDSS: 25V~30V SOT23 T&R 3K
	Mfr.#: DMP31D0U-7 OMO.#: OMO-DMP31D0U-7	MOSFET 30V P-Ch ENH Mode FET -30Vdss 8V 2.5A
	Mfr.#: DMP3100L-7 OMO.#: OMO-DMP3100L-7	MOSFET SINGLE P-CHANNEL
	Mfr.#: DMP3100L OMO.#: OMO-DMP3100L-1190	New and Original
	Mfr.#: DMP3130LDITR OMO.#: OMO-DMP3130LDITR-1190	New and Original
	Mfr.#: DMP3160LQ-7 OMO.#: OMO-DMP3160LQ-7-1190	Trans MOSFET P-CH 30V 2.7A Automotive T/R
	Mfr.#: DMP31D04FB4-7B OMO.#: OMO-DMP31D04FB4-7B-1190	New and Original
	Mfr.#: DMP31D0UFB4 OMO.#: OMO-DMP31D0UFB4-1190	New and Original
	Mfr.#: DMP3165L-7 OMO.#: OMO-DMP3165L-7-DIODES	MOSFET BVDSS: 25V-30V SOT23 T&R

DMP31D0U-7

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes