GA20SICP12-263

Mfr. #:: GA20SICP12-263
Manufacturer:: GeneSiC Semiconductor
Description:: MOSFET 1200V 45A SIC CoPak
Lifecycle:: New from this manufacturer.
Datasheet:: GA20SICP12-263 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: GeneSiC Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: SiC

Mounting Style:: SMD/SMT

Package / Case:: TO-263-7

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 1.2 kV

Id - Continuous Drain Current:: 45 A

Rds On - Drain-Source Resistance:: 50 mOhms

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 100 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 282 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 4.597 mm

Length:: 10.668 mm

Series:: GA20SICP12

Type:: Transistor/Schottky Diode Co-Pack

Width:: 9.169 mm

Brand:: GeneSiC Semiconductor

Product Type:: MOSFET

Factory Pack Quantity:: 50

Subcategory:: MOSFETs

Unit Weight:: 0.056438 oz

Tags: GA20S, GA20, GA2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

GA20SICP12-263 Description

***ical: Trans JFET N-CH 1200V 20A SiC Automotive 8-Pin(7+Tab) D2PAK

***eSiC Semiconductor: SiC Junction Transistor 1200V 50mΩ TO-263-7

***i-Key: SIC CO-PACK SJT/RECT 20A 1.2KV

***nell: SIC CO-PACK, 1.2kV, TO-263; Drain Source; SIC CO-PACK, 1.2kV, TO-263; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:20A; Power Dissipation Pd:157W; Operating Frequency Min:-; Operating Frequency Max:-; RF Transistor Case:TO-263; No. of Pins:3Pins

Market price

Part #	Mfg.	Description	Stock	Price
GA20SICP12-263 DISTI # 20816493	GeneSic Semiconductor Inc	Trans JFET N-CH 1200V 20A SiC 4-Pin(3+Tab) TO-263 RoHS: Compliant	30	2:$39.7250
GA20SICP12-263 DISTI # 1242-1194-ND	GeneSic Semiconductor Inc	SIC CO-PACK SJT/RECT 20A 1.2KV RoHS: Compliant Min Qty: 1 Container: Tube	90In Stock	100:$48.1338 50:$51.3428 10:$55.5140 1:$59.3700
GA20SICP12-263 DISTI # 08X5874	GeneSic Semiconductor Inc	SIC CO-PACK, 1.2kV, TO-263,Drain Source Voltage Vds:1.2kV,Continuous Drain Current Id:20A,Power Dissipation Pd:157W,Operating Frequency Min:-,Operating Frequency Max:-,RF Transistor Case:TO-263,No. of Pins:3Pins RoHS Compliant: Yes	30	1:$31.7800 5:$31.7800 10:$31.7800 25:$31.7800 50:$31.7800 100:$31.7800
GA20SICP12-263 DISTI # 905-GA20SICP12-263	GeneSic Semiconductor Inc	MOSFET 1200V 45A SIC CoPak RoHS: Compliant	81	1:$53.4900 5:$51.9200 10:$50.3400 25:$47.1700 50:$45.6000 100:$44.9900
GA20SICP12-263 DISTI # 2362870	GeneSic Semiconductor Inc	SIC CO-PACK, 1.2kV, TO-263 RoHS: Compliant	30	1:£46.5100 5:£45.2100 10:£43.3500 25:£40.2200 50:£39.7100
GA20SICP12-263 DISTI # 2362870	GeneSic Semiconductor Inc	SIC CO-PACK, 1.2kV, TO-263 RoHS: Compliant	30	1:$94.6300 10:$88.4900 50:$81.8400 100:$76.7300

Image	Part #	Description
	Mfr.#: GA20SICP12-263 OMO.#: OMO-GA20SICP12-263	MOSFET 1200V 45A SIC CoPak
	Mfr.#: GA20SICP12 OMO.#: OMO-GA20SICP12-1190	New and Original
	Mfr.#: GA20SICP12-247 OMO.#: OMO-GA20SICP12-247-GENESIC-SEMICONDUCTOR	New and Original
	Mfr.#: GA20SICP12-263 OMO.#: OMO-GA20SICP12-263-GENESIC-SEMICONDUCTOR	Trans JFET N-CH 1200V 20A SiC 4-Pin(3+Tab) TO-263

GA20SICP12-263

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes