NPT1012B

NPT1012B
Mfr. #:
NPT1012B
Manufacturer:
MACOM
Description:
RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN
Lifecycle:
New from this manufacturer.
Datasheet:
NPT1012B Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
NPT1012B more Information
Product Attribute
Attribute Value
Manufacturer:
MACOM
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN Si
Gain:
13 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Vgs - Gate-Source Breakdown Voltage:
3 V
Id - Continuous Drain Current:
4 mA
Maximum Operating Temperature:
+ 200 C
Pd - Power Dissipation:
44 W
Mounting Style:
Screw Mount
Packaging:
Tray
Configuration:
Single
Operating Frequency:
4 GHz
Brand:
MACOM
P1dB - Compression Point:
43 dBm
Product Type:
RF JFET Transistors
Rds On - Drain-Source Resistance:
440 mOhms
Factory Pack Quantity:
30
Subcategory:
Transistors
Vgs th - Gate-Source Threshold Voltage:
- 1.8 V
Unit Weight:
0.007760 oz
Tags
NPT101, NPT10, NPT1, NPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans JFET N-CH 100V 5.4A GaN 3-Pin AC200BM-F
***i-Key
HEMT N-CH 28V 25W DC-4000MHZ
***hardson RFPD
RF POWER TRANSISTOR
NPTx Series GaN Wideband Transistors
MACOM NPTx Series GaN Wideband Transistors are wideband transistors optimized for DC-2GHz operation. They support CW, pulsed, and linear operations with output power levels to 100W (50dBm) in an industry standard plastic package. They are ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.
Part # Mfg. Description Stock Price
NPT1012B
DISTI # 1465-1415-ND
MACOMHEMT N-CH 28V 25W DC-4000MHZ
RoHS: Compliant
Min Qty: 1
Container: Tray
5In Stock
  • 25:$186.5460
  • 10:$193.5590
  • 1:$203.3800
NPT1012B
DISTI # 937-NPT1012B
MACOMRF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN
RoHS: Compliant
22
  • 1:$189.3500
  • 10:$182.3400
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Availability
Stock:
Available
On Order:
1990
Enter Quantity:
Current price of NPT1012B is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$140.38
$140.38
2
$136.50
$273.00
5
$133.37
$666.85
10
$129.48
$1 294.80
25
$124.80
$3 120.00
50
$120.89
$6 044.50
100
$116.99
$11 699.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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