CGH60120D-GP4

CGH60120D-GP4
Mfr. #:
CGH60120D-GP4
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT Die DC-6.0GHz, 120 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CGH60120D-GP4 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGH60120D-GP4 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Technology:
GaN SiC
Vds - Drain-Source Breakdown Voltage:
32 V
Vgs - Gate-Source Breakdown Voltage:
100 V
Pd - Power Dissipation:
45 W
Mounting Style:
SMD/SMT
Packaging:
Tray
Configuration:
Single
Height:
4.064 mm
Length:
9.652 mm
Width:
5.842 mm
Brand:
Qorvo
Gate-Source Cutoff Voltage:
- 2.9 V
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
50
Subcategory:
Transistors
Part # Aliases:
1092444
Tags
CGH60, CGH6, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***fspeed SCT
Aerospace & Defense, 28 V, 6 GHz, 120W, Die, RoHS
***fspeed
120-W; 6.0-GHz; GaN HEMT Die
***i-Key
RF MOSFET HEMT 28V DIE
***ical
Trans FET 84V 12A GaN HEMT
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Part # Mfg. Description Stock Price
CGH60120D-GP4
DISTI # CGH60120D-GP4-ND
WolfspeedRF MOSFET HEMT 28V DIE
RoHS: Compliant
Min Qty: 10
Container: Tray
30In Stock
  • 10:$136.2210
CGH60120D-GP4
DISTI # 941-CGH60120D
Cree, Inc.RF JFET Transistors GaN HEMT Die DC-6.0GHz, 120 Watt
RoHS: Compliant
30
  • 10:$152.8400
CGH60120D-GP4
DISTI # CGH60120D-GP4
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
0
  • 50:$142.4100
Image Part # Description
CGH60120D-GP4

Mfr.#: CGH60120D-GP4

OMO.#: OMO-CGH60120D-GP4

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 120 Watt
CGH60120D-GP4

Mfr.#: CGH60120D-GP4

OMO.#: OMO-CGH60120D-GP4-WOLFSPEED

RF MOSFET HEMT 28V DIE
CGH60120D

Mfr.#: CGH60120D

OMO.#: OMO-CGH60120D-318

RF JFET Transistors DC-6GHz 120W GaN Gain@ 4GHz 13dB
Availability
Stock:
30
On Order:
2013
Enter Quantity:
Current price of CGH60120D-GP4 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
10
$152.84
$1 528.40
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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