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CGHV1F006S

CGHV1F006S
Mfr. #:
CGHV1F006S
Manufacturer:
N/A
Description:
RF MOSFET HEMT 40V 12DFN
Lifecycle:
New from this manufacturer.
Datasheet:
CGHV1F006S Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGHV1F006S more Information
Product Attribute
Attribute Value
Manufacturer
Wolfspeed / Cree
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Reel
Mounting-Style
SMD/SMT
Operating-Temperature-Range
- 40 C to + 150 C
Package-Case
DFN-12
Technology
GaN SiC
Configuration
Single
Transistor-Type
HEMT
Gain
16 dB
Class
-
Output-Power
6 W
Pd-Power-Dissipation
-
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 40 C
Application
-
Operating-Frequency
18 GHz
Id-Continuous-Drain-Current
950 mA
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Rds-On-Drain-Source-Resistance
-
Transistor-Polarity
N-Channel
Forward-Transconductance-Min
-
Vgs-Gate-Source-Breakdown-Voltage
- 10 V to + 2 V
Gate-Source-Cutoff-Voltage
-
Maximum-Drain-Gate-Voltage
-
NF-Noise-Figure
-
P1dB-Compression-Point
-
Tags
CGHV1F00, CGHV1F, CGHV1, CGHV, CGH
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 40V 12DFN
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Part # Mfg. Description Stock Price
CGHV1F006S-AMP1
DISTI # CGHV1F006S-AMP1-ND		WolfspeedDEMO HEMT TRANS AMP1 CGHV1F006S
RoHS: Compliant
Min Qty: 1
Container: Bulk		1In Stock
  • 1:$596.6200
CGHV1F006S
DISTI # CGHV1F006STR-ND		WolfspeedRF MOSFET HEMT 40V 12DFN
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		On Order
  • 250:$39.8800
CGHV1F006S
DISTI # CGHV1F006SCT-ND		WolfspeedRF MOSFET HEMT 40V 12DFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 100:$43.8682
  • 1:$44.6700
CGHV1F006S
DISTI # CGHV1F006SDKR-ND		WolfspeedRF MOSFET HEMT 40V 12DFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 100:$43.8682
  • 1:$44.6700
CGHV1F006S-AMP3
DISTI # CGHV1F006S-AMP3-ND		WolfspeedDEMO HEMT TRANS AMP3 CGHV1F006S
RoHS: Compliant
Min Qty: 1
Container: Bulk		Temporarily Out of Stock
  • 1:$596.6200
CGHV1F006S
DISTI # 941-CGHV1F006S		Cree, Inc.RF JFET Transistors GaN HEMT DC-18GHz, 6 Watt
RoHS: Compliant		0
  • 1:$39.8800
CGHV1F006S-AMP1
DISTI # 941-CGHV1F006S-AMP1		Cree, Inc.RF Development Tools Test Board with GaN HEMT
RoHS: Compliant		2
  • 1:$596.6200
CGHV1F006S-AMP3
DISTI # 941-CGHV1F006S-AMP3		Cree, Inc.RF Development Tools Test Board with GaN HEMT
RoHS: Compliant		0
  • 1:$596.6200
CGHV1F006S-AMP1
DISTI # CGHV1F006S-AMP1		WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant		0
  • 1:$596.6200
CGHV1F006S-AMP3
DISTI # CGHV1F006S-AMP3		WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant		0
  • 1:$596.6200
Image Part # Description
CGHV1F025S

Mfr.#: CGHV1F025S

OMO.#: OMO-CGHV1F025S

 RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt
CGHV1J070D-GP4

Mfr.#: CGHV1J070D-GP4

OMO.#: OMO-CGHV1J070D-GP4

 RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt
CGHV1F006S-AMP3

Mfr.#: CGHV1F006S-AMP3

OMO.#: OMO-CGHV1F006S-AMP3

 RF Development Tools Test Board with GaN HEMT
CGHV14250F-TB

Mfr.#: CGHV14250F-TB

OMO.#: OMO-CGHV14250F-TB-WOLFSPEED

 TEST FIXTURE FOR CGHV14250
CGHV14500F/P

Mfr.#: CGHV14500F/P

OMO.#: OMO-CGHV14500F-P-1190

 New and Original
CGHV1F006S-AMP1

Mfr.#: CGHV1F006S-AMP1

OMO.#: OMO-CGHV1F006S-AMP1-WOLFSPEED

 DEMO HEMT TRANS AMP1 CGHV1F006S
CGHV14250P

Mfr.#: CGHV14250P

OMO.#: OMO-CGHV14250P-1152

 RF POWER TRANSISTOR
CGHV1F006S-AMP3

Mfr.#: CGHV1F006S-AMP3

OMO.#: OMO-CGHV1F006S-AMP3-WOLFSPEED

 DEMO HEMT TRANS AMP3 CGHV1F006S
CGHV1J025D-GP4

Mfr.#: CGHV1J025D-GP4

OMO.#: OMO-CGHV1J025D-GP4-WOLFSPEED

 RF POWER TRANSISTOR
CGHV1J070D

Mfr.#: CGHV1J070D

OMO.#: OMO-CGHV1J070D-318

 RF JFET Transistors DC-18GHz 70 Watts Gain 17dB @10GHz
Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of CGHV1F006S is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$59.82
$59.82
10
$56.83
$568.29
100
$53.84
$5 383.80
500
$50.85
$25 423.50
1000
$47.86
$47 856.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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