SIHFR1N60A-GE3

SIHFR1N60A-GE3
Mfr. #:
SIHFR1N60A-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds TO-252 DPAK
Lifecycle:
New from this manufacturer.
Datasheet:
SIHFR1N60A-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHFR1N60A-GE3 DatasheetSIHFR1N60A-GE3 Datasheet (P4-P6)SIHFR1N60A-GE3 Datasheet (P7-P9)SIHFR1N60A-GE3 Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
1.4 A
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
14 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
36 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
2.38 mm
Length:
6.73 mm
Series:
SIHFR
Width:
6.22 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
0.88 S
Fall Time:
20 ns
Product Type:
MOSFET
Rise Time:
14 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
18 ns
Typical Turn-On Delay Time:
9.8 ns
Unit Weight:
0.011993 oz
Tags
SIHFR1N, SIHFR1, SIHFR, SIHF, SIH
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 1.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK
***et Europe
MOS Power Transistors HV (>= 200V)
Part # Mfg. Description Stock Price
SIHFR1N60A-GE3
DISTI # V36:1790_09218418
Vishay IntertechnologiesTrans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK
RoHS: Compliant
0
  • 3000000:$0.3919
  • 1500000:$0.3943
  • 300000:$0.5960
  • 30000:$0.9425
  • 3000:$1.0000
SIHFR1N60A-GE3
DISTI # SIHFR1N60A-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 1.4A TO252AA
RoHS: Not compliant
Min Qty: 1
Container: Tube
3000In Stock
  • 6000:$0.4013
  • 3000:$0.4225
  • 500:$0.5734
  • 100:$0.6941
  • 25:$0.8448
  • 10:$0.8900
  • 1:$1.0000
SIHFR1N60A-GE3
DISTI # SIHFR1N60A-GE3
Vishay IntertechnologiesMOS Power Transistors HV (>= 200V) (Alt: SIHFR1N60A-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 4425
  • 1000:€0.4899
  • 500:€0.4959
  • 100:€0.5049
  • 50:€0.5119
  • 25:€0.5799
  • 10:€0.7149
  • 1:€0.9959
SIHFR1N60A-GE3
DISTI # SIHFR1N60A-GE3
Vishay IntertechnologiesMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: SIHFR1N60A-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.3679
  • 18000:$0.3779
  • 12000:$0.3889
  • 6000:$0.4049
  • 3000:$0.4179
SIHFR1N60A-GE3
DISTI # 78-SIHFR1N60A-GE3
Vishay IntertechnologiesMOSFET 600V Vds TO-252 DPAK
RoHS: Compliant
907
  • 1:$1.0000
  • 10:$0.8280
  • 100:$0.6360
  • 500:$0.5470
  • 1000:$0.4320
SIHFR1N60A-GE3
DISTI # SIHFR1N60A-GE3
Vishay IntertechnologiesTransistor: N-MOSFET,unipolar,600V,0.98A,36W,DPAK147
  • 300:$0.6300
  • 75:$0.6800
  • 20:$0.7600
  • 5:$0.8600
  • 1:$0.9500
SIHFR1N60A-GE3
DISTI # XSKDRABV0026536
Vishay IntertechnologiesSwitching Controller
RoHS: Compliant
3525 in Stock0 on Order
  • 3525:$0.6853
  • 975:$0.7343
SIHFR1N60AGE3Vishay IntertechnologiesPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RoHS: Compliant
3000
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    Availability
    Stock:
    907
    On Order:
    2890
    Enter Quantity:
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