IXDR30N120D1

IXDR30N120D1
Mfr. #:
IXDR30N120D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 30 Amps 1200V
Lifecycle:
New from this manufacturer.
Datasheet:
IXDR30N120D1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
IXYS
Product Category
IGBTs - Single
Series
IXDR30N120
Packaging
Tube
Unit-Weight
0.186952 oz
Mounting-Style
Through Hole
Tradename
ISOPLUS
Package-Case
ISOPLUS247
Input-Type
Standard
Mounting-Type
Through Hole
Supplier-Device-Package
ISOPLUS247
Configuration
Single
Power-Max
200W
Reverse-Recovery-Time-trr
40ns
Current-Collector-Ic-Max
50A
Voltage-Collector-Emitter-Breakdown-Max
1200V
IGBT-Type
NPT
Current-Collector-Pulsed-Icm
60A
Vce-on-Max-Vge-Ic
2.9V @ 15V, 30A
Switching-Energy
4.6mJ (on), 3.4mJ (off)
Gate-Charge
120nC
Td-on-off-25°C
-
Test-Condition
600V, 30A, 47 Ohm, 15V
Pd-Power-Dissipation
200 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Collector-Emitter-Voltage-VCEO-Max
1.2 kV
Collector-Emitter-Saturation-Voltage
2.4 V
Continuous-Collector-Current-at-25-C
50 A
Gate-Emitter-Leakage-Current
500 nA
Maximum-Gate-Emitter-Voltage
+/- 20 V
Continuous-Collector-Current-Ic-Max
60 A
Tags
IXDR3, IXDR, IXD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 1200V 50A 200W ISOPLUS247
***ark
Igbt W/ Diode; 1.2Kv, 50A; Isoplus-247; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):2.4V; Power Dissipation Pd:200W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; No. Of Pins:3Pins; Product Range:-; Msl:- Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, ISOPLUS247; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AD; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Ic Continuous a Max:50A; Fall Time tf:70ns; Junction to Case Thermal Resistance A:0.6°C/W; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:Copack (FRD); Power Dissipation Max:200W; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:1.2kV
***nell
IGBT, ISOPLUS247; Prąd kolektora DC:50A; Napięcie nasycenia kolektor - emiter Vce(on):2.4V; Straty mocy Pd:200W; Napięcie kolektor - emiter V(br)ceo:1.2kV; Rodzaj obudowy tranzystora:TO-247AD; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (12-Jan-2017); Biegunowość tranzystora:Kanał N; Czas narastania:70ns; Czas opadania tf:70ns; Konfiguracja pinów:Copack (FRD); Napięcie Vces:1.2kV; Prąd Ic stały a, maks.:50A; Rezystancja termiczna złącze - obudowa A:0.6°C/W; Rodzaj tranzystora:IGBT; Straty mocy, maks.:200W; Temperatura robocza, min.:-55°C; Typ zakończenia:Przewlekane; Zakres temperatury roboczej:-55°C do +150°C
Part # Mfg. Description Stock Price
IXDR30N120D1
DISTI # IXDR30N120D1-ND
IXYS CorporationIGBT 1200V 50A 200W ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$10.0040
IXDR30N120D1
DISTI # 747-IXDR30N120D1
IXYS CorporationIGBT Transistors 30 Amps 1200V
RoHS: Compliant
1
  • 1:$11.3300
  • 10:$10.3000
  • 25:$9.5300
  • 50:$8.9800
  • 100:$8.7600
  • 250:$7.9800
  • 500:$7.4700
IXDR30N120D1
DISTI # 1300075
IXYS CorporationIGBT, ISOPLUS247
RoHS: Compliant
0
  • 1:£9.1200
  • 5:£8.5700
  • 10:£7.2100
  • 50:£6.7900
  • 100:£6.6500
Image Part # Description
IXDR30N120D1

Mfr.#: IXDR30N120D1

OMO.#: OMO-IXDR30N120D1

IGBT Transistors 30 Amps 1200V
IXDR30N120

Mfr.#: IXDR30N120

OMO.#: OMO-IXDR30N120

IGBT Transistors 30 Amps 1200V
IXDR30N120D1

Mfr.#: IXDR30N120D1

OMO.#: OMO-IXDR30N120D1-IXYS-CORPORATION

IGBT Transistors 30 Amps 1200V
IXDR30N120

Mfr.#: IXDR30N120

OMO.#: OMO-IXDR30N120-IXYS-CORPORATION

IGBT Transistors 30 Amps 1200V
Availability
Stock:
Available
On Order:
5000
Enter Quantity:
Current price of IXDR30N120D1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$11.20
$11.20
10
$10.64
$106.45
100
$10.08
$1 008.45
500
$9.52
$4 762.15
1000
$8.96
$8 964.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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