HGTG18N120BND

Mfr. #:: HGTG18N120BND
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
Lifecycle:: New from this manufacturer.
Datasheet:: HGTG18N120BND Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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Product Attribute
Attribute Value

Manufacturer: Fairchild Semiconductor

Product Category: IGBTs - Single

Series: -

Packaging: Tube

Part-Aliases: HGTG18N120BND_NL

Unit-Weight: 0.225401 oz

Mounting-Style: Through Hole

Package-Case: TO-247-3

Input-Type: Standard

Mounting-Type: Through Hole

Supplier-Device-Package: TO-247

Configuration: Single

Power-Max: 390W

Reverse-Recovery-Time-trr: 75ns

Current-Collector-Ic-Max: 54A

Voltage-Collector-Emitter-Breakdown-Max: 1200V

IGBT-Type: NPT

Current-Collector-Pulsed-Icm: 160A

Vce-on-Max-Vge-Ic: 2.7V @ 15V, 18A

Switching-Energy: 1.9mJ (on), 1.8mJ (off)

Gate-Charge: 165nC

Td-on-off-25°C: 23ns/170ns

Test-Condition: 960V, 18A, 3 Ohm, 15V

Pd-Power-Dissipation: 390 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Collector-Emitter-Voltage-VCEO-Max: 1200 V

Collector-Emitter-Saturation-Voltage: 2.45 V

Continuous-Collector-Current-at-25-C: 54 A

Gate-Emitter-Leakage-Current: +/- 250 nA

Maximum-Gate-Emitter-Voltage: +/- 20 V

Continuous-Collector-Current-Ic-Max: 54 A

Tags: HGTG18N120BND, HGTG18N120B, HGTG18, HGTG1, HGTG, HGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG18N120BND Description

***Components: In a Tube of 30, ON Semiconductor HGTG18N120BND IGBT, 54 A 1200 V, 3-Pin TO-247

***ical: Trans IGBT Chip N-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Rail

***p One Stop Global: Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: HGTG18N120BND Series 1200 V 54 A Flange Mount NPT N-Channel IGBT-TO-247

***inecomponents.com: 54A, 1200V, NPT Series N-Channel IGBTwith Anti-Parallel Hyperfast Diode

***i-Key: IGBT NPT N-CHAN 1200V 54A TO-247

***eco: ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ

***ser: IGBTs 36A, 1200V, N-Ch

***Semiconductor: IGBT, 1200V, NPT

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.45V; Power Dissipation, Pd:390W; Package/Case:TO-247; C-E Breakdown Voltage:1200V ;RoHS Compliant: Yes

***rchild Semiconductor: HGTG18N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

***nell: IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:1200V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:390W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic @ Vce Sat:18A; Current, Icm Pulsed:160A; Device Marking:HGTG18N120BND; Power, Pd:390W; Time, Rise:22ns

***ment14 APAC: IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:390W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic @ Vce Sat:18A; Current Ic Continuous a Max:54A; Device Marking:HGTG18N120BND; Fall Time Max:140ns; Fall Time Typ:90ns; Package / Case:TO-247; Power Dissipation Max:390W; Power Dissipation Pd:390W; Power Dissipation Pd:390W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

Market price

Part #	Mfg.	Description	Stock	Price
HGTG18N120BND DISTI # HGTG18N120BND-ND	ON Semiconductor	IGBT 1200V 54A 390W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	450In Stock	1350:$3.6624 900:$4.2050 450:$4.6119 10:$5.8330 1:$6.4600
HGTG18N120BND DISTI # HGTG18N120BND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG18N120BND) RoHS: Compliant Min Qty: 50 Container: Tube	Americas - 450
HGTG18N120BND DISTI # 58K8901	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8901) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$5.6400 900:$5.1600
HGTG18N120BND DISTI # 58K8901	ON Semiconductor	SINGLE IGBT, 1.2KV, 54A, TO-247,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2.45V,Power Dissipation Pd:390W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes	0	1:$7.7100 10:$7.0000 25:$6.6800 50:$6.2500 100:$5.8200 250:$5.5800 500:$5.1000
HGTG18N120BND DISTI # 97K1398	ON Semiconductor	IGBT Single Transistor, General Purpose, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes	0	1:$6.5500 10:$5.9500 25:$5.6800 50:$5.3300 100:$4.9700 250:$4.7600 500:$4.3600
HGTG18N120BND DISTI # 512-HGTG18N120BND	ON Semiconductor	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde RoHS: Compliant	436	1:$6.1500 10:$5.5600 25:$5.3000 100:$4.6000 250:$4.4000
HGTG18N120BND DISTI # 9034285P	ON Semiconductor	IGBT N-CH 1200V 54A NPT TO-247, TU	14	15:£4.6500 30:£4.4300 100:£3.8400 300:£3.6800
HGTG18N120BND DISTI # 9034285	ON Semiconductor	IGBT N-CH 1200V 54A NPT TO-247, EA	58	1:£5.1400 15:£4.6500 30:£4.4300 100:£3.8400 300:£3.6800
HGTG18N120BND	Fairchild Semiconductor Corporation	INSTOCK	62
HGTG18N120BND DISTI # 1095111	ON Semiconductor	IGBT, N, TO-247 RoHS: Compliant	9	1:$9.7400 10:$8.8000 25:$8.3900 100:$7.2800 250:$6.9700
HGTG18N120BND DISTI # 1095111	ON Semiconductor	IGBT, N, TO-247 RoHS: Compliant	757	1:£5.2700 5:£4.7800 10:£4.1300 50:£3.8600 100:£3.5800

Image	Part #	Description
	Mfr.#: HGTG18N120BND OMO.#: OMO-HGTG18N120BND	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
	Mfr.#: HGTG18N120BN OMO.#: OMO-HGTG18N120BN	IGBT Transistors 54A 1200V N-Ch
	Mfr.#: HGTG18N120BND OMO.#: OMO-HGTG18N120BND-ON-SEMICONDUCTOR	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
	Mfr.#: HGTG18N120 OMO.#: OMO-HGTG18N120-1190	New and Original
	Mfr.#: HGTG18N120BN OMO.#: OMO-HGTG18N120BN-ON-SEMICONDUCTOR	IGBT 1200V 54A 390W TO247
	Mfr.#: HGTG18N120BND,18N120BND OMO.#: OMO-HGTG18N120BND-18N120BND-1190	New and Original
	Mfr.#: HGTG18N120BND,18N120BND, OMO.#: OMO-HGTG18N120BND-18N120BND--1190	New and Original
	Mfr.#: HGTG18N120BND,18N120BND,18N120, OMO.#: OMO-HGTG18N120BND-18N120BND-18N120--1190	New and Original
	Mfr.#: HGTG18N120BND-NL OMO.#: OMO-HGTG18N120BND-NL-1190	New and Original
	Mfr.#: HGTG18N120BN G18N120BN OMO.#: OMO-HGTG18N120BN-G18N120BN-1190	New and Original

HGTG18N120BND

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes