FCPF190N60-F152

Mfr. #:: FCPF190N60-F152
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET 600V, 20.2A, 199mOhm SuperFET II MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: FCPF190N60-F152 Datasheet
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 20.2 A

Rds On - Drain-Source Resistance:: 199 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3.5 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 57 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 39 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 16.3 mm

Length:: 10.67 mm

Transistor Type:: 1 N-Channel

Width:: 4.7 mm

Brand:: ON Semiconductor / Fairchild

Forward Transconductance - Min:: 21 S

Fall Time:: 5 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 64 ns

Typical Turn-On Delay Time:: 20 ns

Part # Aliases:: FCPF190N60_F152

Unit Weight:: 0.090478 oz

Tags: FCPF190N60-F, FCPF190N60, FCPF19, FCPF1, FCPF, FCP

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Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

FCPF190N60-F152 Description

***emi: N-Channel SuperFET® II MOSFET 600V, 20.2A, 199mΩ

***ical: Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Tube

***r Electronics: Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***el Electronic: Chip Resistor - Surface Mount 100 k Ω 0201 (0603 Metric) ±1% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RESISTOR, 0201, 0.05W, 1%, 100K

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***emi: N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-220

***Yang: Trans MOSFET N-CH 600V 22A 3-Pin TO-220 Tube - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 22A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency

***emi: N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 16 A, 199 mΩ, TO-220F

***et: Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220F Rail

*** Stop Electro: Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N CH, 600V, 16A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:35.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Pulse Current Idm:48A

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***emi: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220F

***ical: Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Rail

***r Electronics: Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N, TO-220F; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.19ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-220F; Current, Idm pulse:60A; Energy, avalanche repetitive Ear:20.8mJ; Pin configuration:1(G), 2(D), 3(S); Power, Pd:39W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Rds measurement:10V; Voltage, Vds max:600V; Voltage, Vgs max:5V

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP

*** Source Electronics: MOSFET N-CH 600V 17A TO-220FP / Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220FP Tube

***ark: MOSFET, N CH, 600V, 17A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ure Electronics: Single N-Channel 600 V 160 mOhm 44 nC CoolMOS Power Mosfet - TO-220-3FP

***et: CoolMOS P6 Power Transistor N-Channel 600V 68A 3-Pin TO-220FP

***ow.cn: Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220FP Tube

***et Japan: Trans MOSFET N-CH 600(Min)V 10.4A 3-Pin TO-220 FP Tube

***ark: MOSFET, N-CH, 600V, 23.8A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:23.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***icroelectronics: N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-220 package

***ical: Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB Tube

***el Electronic: Dual-Output, 2-A/1-A Low Dropout Voltage Regulators with Integrated SVS 24-HTSSOP -40 to 125

***ure Electronics: Single N-Channel 650 V 0.15 O 190 W Flange Mount Power Mosfet - TO-220-3

***ark: MOSFET, N-CH, 600V, 22A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Market price

Part #	Mfg.	Description	Stock	Price
FCPF190N60-F152 DISTI # 32400928	ON Semiconductor	SF2 600V 190MOHM F TO220F	7000	1000:$1.3680
FCPF190N60-F152 DISTI # FCPF190N60-F152-ND	ON Semiconductor	MOSFET N-CH 600V 20.2A TO-220F RoHS: Compliant Min Qty: 1000 Container: Tube	Temporarily Out of Stock	1000:$1.3680
FCPF190N60-F152 DISTI # V36:1790_06359294	ON Semiconductor	SF2 600V 190MOHM F TO220F	0	1000000:$1.0890 500000:$1.0910 100000:$1.1900 10000:$1.3430 1000:$1.3680
FCPF190N60_F152 DISTI # FCPF190N60-F152	ON Semiconductor	Trans MOSFET N-CH 600V 20.2A 3-Pin TO-220F Tube - Rail/Tube (Alt: FCPF190N60-F152) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$1.0900 2000:$1.0900 4000:$1.0900 6000:$1.0900 10000:$1.0900
FCPF190N60_F152 DISTI # FCPF190N60F152	ON Semiconductor	Trans MOSFET N-CH 600V 20.2A 3-Pin TO-220F Tube - Bulk (Alt: FCPF190N60F152) Min Qty: 1 Container: Bulk	Americas - 0
FCPF190N60-F152 DISTI # 48AC0853	ON Semiconductor	SF2 600V 190MOHM F TO220F / TUBE	0	1000:$1.7100 500:$1.8100 250:$1.9400 100:$2.1200 1:$2.5600
FCPF190N60-F152 DISTI # 512-FCPF190N60_F152	ON Semiconductor	MOSFET 600V, 20.2A, 199mOhm SuperFET II MOSFET RoHS: Compliant	984	1:$2.6400 10:$2.2400 100:$1.7900 500:$1.5700 1000:$1.3000 2000:$1.2100 5000:$1.1600

Image	Part #	Description
	Mfr.#: IPA60R170CFD7XKSA1 OMO.#: OMO-IPA60R170CFD7XKSA1	MOSFET HIGH POWER_NEW
	Mfr.#: SIHA22N60AEL-GE3 OMO.#: OMO-SIHA22N60AEL-GE3	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
	Mfr.#: FCP125N60E OMO.#: OMO-FCP125N60E	MOSFET 600V 29A N-Chnl SuperFET Easy-Drive
	Mfr.#: STFU24N60M2 OMO.#: OMO-STFU24N60M2	MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package
	Mfr.#: TSM60NB190CZ C0G OMO.#: OMO-TSM60NB190CZ-C0G	MOSFET 600V, 18A, Single N- Channel Power MOSFET
	Mfr.#: STF28N65M2 OMO.#: OMO-STF28N65M2	MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP package
	Mfr.#: STF24N60M2 OMO.#: OMO-STF24N60M2	MOSFET N-Ch 600V 0.168Ohm 18A MDmesh M2
	Mfr.#: STP65NF06 OMO.#: OMO-STP65NF06	MOSFET N-channel MOSFET
	Mfr.#: STF28N65M2 OMO.#: OMO-STF28N65M2-STMICROELECTRONICS	MOSFET N-CH 650V 20A TO220FP
	Mfr.#: SIHA22N60AEL-GE3 OMO.#: OMO-SIHA22N60AEL-GE3-VISHAY	MOSFET N-CHAN 600V

FCPF190N60-F152

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes