SIS424DN-T1-GE3

SIS424DN-T1-GE3
Mfr. #:
SIS424DN-T1-GE3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET 20V 35A 39W
Lifecycle:
New from this manufacturer.
Datasheet:
SIS424DN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
VISHAY
Product Category
FETs - Single
Series
SISxxxDN
Packaging
Reel
Part-Aliases
SIS424DN-GE3
Mounting-Style
SMD/SMT
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single Quad Drain Triple Source
Package-Case
PowerPAK-1212-8
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
3.7 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
10 ns
Rise-Time
13 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
35 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Resistance
7.1 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
20 ns
Typical-Turn-On-Delay-Time
15 ns
Forward-Transconductance-Min
39 S
Channel-Mode
Enhancement
Tags
SIS42, SIS4, SIS
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 20V 19.6A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET N-CH 20V 35A PPAK 1212-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:19.6A; On Resistance Rds(On):0.0053Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
Part # Mfg. Description Stock Price
SIS424DN-T1-GE3
DISTI # SIS424DN-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 35A PPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.4389
SIS424DN-T1-GE3
DISTI # SIS424DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 19.6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS424DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
    SIS424DN-T1-GE3.
    DISTI # 61AC1927
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:19.6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:39W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1:$0.5100
    • 6000:$0.4950
    • 12000:$0.4750
    • 18000:$0.4610
    • 30000:$0.4490
    SIS424DN-T1-GE3
    DISTI # 781-SIS424DN-T1-GE3
    Vishay IntertechnologiesMOSFET 20V 35A 39W
    RoHS: Compliant
    0
      SIS424DN-T1-GE3Vishay IntertechnologiesMOSFET 20V 35A 39W
      RoHS: Compliant
      Americas -
        Image Part # Description
        SIS424DN-T1-GE3

        Mfr.#: SIS424DN-T1-GE3

        OMO.#: OMO-SIS424DN-T1-GE3

        MOSFET RECOMMENDED ALT 781-SIS410DN-T1-GE3
        SIS424DN-T1-GE3

        Mfr.#: SIS424DN-T1-GE3

        OMO.#: OMO-SIS424DN-T1-GE3-VISHAY

        RF Bipolar Transistors MOSFET 20V 35A 39W
        Availability
        Stock:
        Available
        On Order:
        3000
        Enter Quantity:
        Current price of SIS424DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $0.66
        $0.66
        10
        $0.63
        $6.25
        100
        $0.59
        $59.25
        500
        $0.56
        $279.80
        1000
        $0.53
        $526.70
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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