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CSD18513Q5AT

CSD18513Q5AT
Mfr. #:
CSD18513Q5AT
Description:
MOSFET 40V N-Channel NexFET Power MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
CSD18513Q5AT Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
CSD18513Q5AT more Information CSD18513Q5AT Product Details
Product Attribute
Attribute Value
Manufacturer:
Texas Instruments
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
VSONP-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
4.1 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
59 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
96 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
NexFET
Packaging:
Reel
Series:
CSD18513Q5A
Transistor Type:
1 N-Channel
Brand:
Texas Instruments
Forward Transconductance - Min:
89 S
Fall Time:
4 ns
Product Type:
MOSFET
Rise Time:
12 ns
Factory Pack Quantity:
250
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
21 ns
Typical Turn-On Delay Time:
6 ns
Tags
CSD1851, CSD185, CSD18, CSD1, CSD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSONP -55 to 150
***ical
Trans MOSFET N-CH Si 40V 100A 8-Pin VSONP EP T/R
*** Stop Electro
Power Field-Effect Transistor, 22A I(D), 40V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
40V N-CHANNEL NEXFET POWER MOSF
***AS INSTUMENTS
This 40-V, 2.8-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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Availability
Stock:
414
On Order:
2397
Enter Quantity:
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