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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Part # | Mfg. | Description | Stock | Price |
---|---|---|---|---|
HGT1S7N60A4DS9A DISTI # HGT1S7N60A4DS9A | ON Semiconductor | 600V, SMPS Series N-channel Igbt Wirth Parallel Hyperfast Diode - Bulk (Alt: HGT1S7N60A4DS9A) RoHS: Not Compliant Min Qty: 463 Container: Bulk | Americas - 0 |
|
HGT1S7N60A4DS9A | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Not Compliant | 83073 |
|
HGT1S7N60A4DS9A | Fairchild Semiconductor Corporation | RoHS: Compliant | Americas - 281600 | |
HGT1S7N60A4DS9A | 2311 |
Image | Part # | Description |
---|---|---|
Mfr.#: HGT1S7N60A4 OMO.#: OMO-HGT1S7N60A4-1190 |
New and Original | |
Mfr.#: HGT1S7N60A40S OMO.#: OMO-HGT1S7N60A40S-1190 |
New and Original | |
Mfr.#: HGT1S7N60A4DS |
IGBT 600V 34A 125W TO263AB | |
Mfr.#: HGT1S7N60A4DS,G7N60A4D |
New and Original | |
Mfr.#: HGT1S7N60A4DS9A OMO.#: OMO-HGT1S7N60A4DS9A-1190 |
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB | |
Mfr.#: HGT1S7N60A4S OMO.#: OMO-HGT1S7N60A4S-1190 |
New and Original | |
Mfr.#: HGT1S7N60A4S9A OMO.#: OMO-HGT1S7N60A4S9A-1190 |
IGBT Transistors 600V N-Channel IGBT SMPS Series |