TPN2R304PL,L1Q

TPN2R304PL,L1Q
Mfr. #:
TPN2R304PL,L1Q
Manufacturer:
Toshiba
Description:
MOSFET 40 Volt N-Channel
Lifecycle:
New from this manufacturer.
Datasheet:
TPN2R304PL,L1Q Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TPN2R304PL,L1Q DatasheetTPN2R304PL,L1Q Datasheet (P4-P6)TPN2R304PL,L1Q Datasheet (P7-P9)TPN2R304PL,L1Q Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSON-Advance-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
4 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.4 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
41 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
104 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
0.85 mm
Length:
3.1 mm
Series:
TPN2R304PL
Transistor Type:
1 N-Channel
Width:
3.1 mm
Brand:
Toshiba
Fall Time:
12.2 ns
Product Type:
MOSFET
Rise Time:
7.8 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
37 ns
Typical Turn-On Delay Time:
17.5 ns
Tags
TPN2R3, TPN2R, TPN2, TPN
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 40V 100A 8-Pin TSON Advance
***el Electronic
IC BUFFER NON-INVERT SOT5
***i-Key
MOSFET N-CH 40V 80A 8TSON
***
TRANSISTOR PD=140W F=1MHZ
***ure Electronics
Single N-Channel 40 V 2.2 mOhm 37 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
MOSFET, N-CH, 40V, 100A, 150DEG C, 69W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 40V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 69W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
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IRFR7440PBF N-channel MOSFET Transistor; 90 A; 40 V; 3-Pin DPAK
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40V Single N-Channel HEXFET Power MOSFET in a Lead Free D-Pak package, DPAK-3, RoHS
*** Source Electronics
MOSFET N CH 40V 90A DPAK / Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) DPAK T/R
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Single N-Channel 40 V 2.4 mOhm 89 nC HEXFET® Power Mosfet - TO-252AA
*** Stop Electro
Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 40V, 90A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 140W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ure Electronics
Single N-Channel 40 V 2.4 mOhm 92 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5x6mm package, PG-TDSON-8, RoHS
***ark
T&R / MOSFET, 40V, 85A, 2.4 mOhm, 92 nC Qg, PQFN56
*** Source Electronics
Trans MOSFET N-CH Si 40V 159A 8-Pin QFN EP T/R / MOSFET N-CH 40V 85A 8PQFN
***roFlash
Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***Yang
Trans MOSFET N-CH 40V 85A 8-Pin PQFN T/R 4k - Tape and Reel
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 104 W
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull
***nell
MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***ical
Trans MOSFET N-CH 40V 31A Automotive 8-Pin PowerDI EP T/R
***des Inc SCT
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ure Electronics
MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 31A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
MOSFET N-CH 40V 31A PWRDI5060-8
***ical
Trans MOSFET N-CH 40V 26A Automotive 8-Pin PowerDI EP T/R
***ark
Mosfet, N-Ch, 40V, 90A, Powerdi 5060 Rohs Compliant: Yes
***des Inc SCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***et
MOSFET BVDSS: 31V~40V POWERDI5060-8 T&R 2.5K
***ark
Mosfet, N-Ch, 40V, 100A, Powerdi 5060 Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 40V 31A 8-Pin PowerDI EP T/R
***des Inc SCT
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ure Electronics
MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K
Part # Mfg. Description Stock Price
TPN2R304PL,L1Q
DISTI # TPN2R304PLL1QCT-ND
Toshiba America Electronic ComponentsMOSFET N-CH 40V 80A TSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
19990In Stock
  • 1000:$0.3280
  • 500:$0.4099
  • 100:$0.5534
  • 10:$0.7170
  • 1:$0.8200
TPN2R304PL,L1Q
DISTI # TPN2R304PLL1QDKR-ND
Toshiba America Electronic ComponentsMOSFET N-CH 40V 80A TSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
19990In Stock
  • 1000:$0.3280
  • 500:$0.4099
  • 100:$0.5534
  • 10:$0.7170
  • 1:$0.8200
TPN2R304PL,L1Q
DISTI # TPN2R304PLL1QTR-ND
Toshiba America Electronic ComponentsMOSFET N-CH 40V 80A TSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
15000In Stock
  • 5000:$0.2786
TPN2R304PLL1Q
DISTI # TPN2R304PL,L1Q
Toshiba America Electronic ComponentsPb-F POWER MOSFET TRANSISTOR TSON-ADV PD=140W F=1MHZ - Tape and Reel (Alt: TPN2R304PL,L1Q)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.3109
  • 10000:$0.2929
  • 20000:$0.2759
  • 30000:$0.2619
  • 50000:$0.2549
TPN2R304PLL1Q(M
DISTI # TPN2R304PL,L1Q(M
Toshiba America Electronic ComponentsTrans MOSFET N 40V 80A 8-Pin TSON (Alt: TPN2R304PL,L1Q(M)
RoHS: Compliant
Min Qty: 5000
Asia - 0
    TPN2R304PL,L1Q
    DISTI # 757-TPN2R304PLL1Q
    Toshiba America Electronic ComponentsMOSFET 40 Volt N-Channel
    RoHS: Compliant
    94020
    • 1:$0.9100
    • 10:$0.7100
    • 100:$0.4580
    • 1000:$0.3670
    • 5000:$0.3090
    • 10000:$0.2710
    • 25000:$0.2590
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    Availability
    Stock:
    Available
    On Order:
    1988
    Enter Quantity:
    Current price of TPN2R304PL,L1Q is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.91
    $0.91
    10
    $0.80
    $7.97
    100
    $0.46
    $45.50
    1000
    $0.33
    $330.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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