PartNumber | TPN2R304PL,L1Q | TPN2010FNH,L1Q | TPN2R203NC,L1Q |
Description | MOSFET 40 Volt N-Channel | MOSFET UMOSVIII 250V 200m (VGS=10V) TSON-ADV | MOSFET X35PBF Power MOSFET Trans VGS10V VDS30V |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSON-Advance-8 | TSON-Advance-8 | TSON-Advance-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 250 V | 30 V |
Id Continuous Drain Current | 80 A | 9.9 A | 45 A |
Rds On Drain Source Resistance | 4 mOhms | 168 mOhms | 1.8 mOhms |
Vgs th Gate Source Threshold Voltage | 1.4 V | 4 V | 2.3 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 41 nC | 7 nC | 34 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 104 W | 39 W | 42 W |
Configuration | Single | Triple | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 0.85 mm | 0.85 mm | 0.85 mm |
Length | 3.1 mm | 3.1 mm | 3.1 mm |
Series | TPN2R304PL | TPN2010FNH | TPN2R203NC |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 3.1 mm | 3.1 mm | 3.1 mm |
Brand | Toshiba | Toshiba | Toshiba |
Fall Time | 12.2 ns | 4.5 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 7.8 ns | 5.2 ns | - |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 37 ns | 19 ns | - |
Typical Turn On Delay Time | 17.5 ns | 14 ns | - |