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FQP4N50

FQP4N50
Mfr. #:
FQP4N50
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 500V N-Channel QFET
Lifecycle:
New from this manufacturer.
Datasheet:
FQP4N50 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Id - Continuous Drain Current:
3.4 A
Rds On - Drain-Source Resistance:
2.7 Ohms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
70 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
2.9 S
Fall Time:
30 ns
Product Type:
MOSFET
Rise Time:
45 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
20 ns
Typical Turn-On Delay Time:
12 ns
Unit Weight:
0.050717 oz
Tags
FQP4N, FQP4, FQP
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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 500V 3.4A TO-220
***ser
MOSFETs 500V N-Channel QFET
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:SOT-78B; Current Id Max:3.4A; On State Resistance Max:2.7ohm; Package / Case:TO-220; Power Dissipation Pd:70W; Power Dissipation Pd:70W; Pulse Current Idm:13.6A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Part # Mfg. Description Stock Price
FQP4N50
DISTI # FQP4N50-ND		ON SemiconductorMOSFET N-CH 500V 3.4A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    FQP4N50
    DISTI # FQP4N50    		ON Semiconductor- Bulk (Alt: FQP4N50)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
      FQP4N50
      DISTI # 512-FQP4N50      		ON SemiconductorMOSFET 500V N-Channel QFET
      RoHS: Compliant      		0
        FQP4N50_Q
        DISTI # 512-FQP4N50_Q        		ON SemiconductorMOSFET 500V N-Channel QFET
        RoHS: Not compliant        		0
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          Availability
          Stock:
          Available
          On Order:
          5000
          Enter Quantity:
          Current price of FQP4N50 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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