VN2410L-G-P013

Mfr. #:: VN2410L-G-P013
Manufacturer:: Microchip Technology
Description:: MOSFET N-CH Enhancmnt Mode MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: VN2410L-G-P013 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: VN2410L-G-P013 more Information VN2410L-G-P013 Product Details

Product Attribute
Attribute Value

Manufacturer:: Microchip

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-92-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 240 V

Id - Continuous Drain Current:: 190 mA

Rds On - Drain-Source Resistance:: 10 Ohms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 1 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Ammo Pack

Product:: MOSFET Small Signal

Transistor Type:: 1 N-Channel

Brand:: Microchip Technology

Fall Time:: 24 ns

Product Type:: MOSFET

Rise Time:: 8 ns

Factory Pack Quantity:: 2000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 23 ns

Typical Turn-On Delay Time:: 8 ns

Unit Weight:: 0.016000 oz

Tags: VN2410L-G, VN2410L, VN241, VN24, VN2

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

VN2410L-G-P013 Description

***ark: MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V, 10 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES

***et: Trans MOSFET N-CH 240V 0.19A 3-Pin TO-92 T/R

***roFlash: Small Signal Field-Effect Transistor, 0.15A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

***hard Electronics: Transistor: P-MOSFET; unipolar; -100V; -0.23A; 0.7W; TO92

***ure Electronics: P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET - TO-92

***ark: P CH DMOS FET, -100V, 230mA, TO-92; Transistor Polarity:P Channel; Continuous Drain Current, Id:230mA; Drain Source Voltage, Vds:-100V; On Resistance, Rds(on):8ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-3.5V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:700mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:230mA; Current Temperature:25°C; Device Marking:ZVP2110A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:700mW; Power Dissipation Pd:700mW; Power Dissipation Ptot Max:700mW; Pulse Current Idm:3A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-3.5V; Voltage Vgs Rds on Measurement:-10V

***et Europe: Trans MOSFET P-CH 100V 0.23A 3-Pin E-Line Box

***ure Electronics: P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET

***roFlash: Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***ical: Trans MOSFET P-CH 240V 0.2A Automotive 3-Pin E-Line

***ure Electronics: P-Channel 240 V 1 A 750 mW Vertical DMOS FET - TO-92

***ark: Mosfet Bvdss: 101V~250V Ep3sc T&R 4K Rohs Compliant: Yes

***(Formerly Allied Electronics): MOSFET P-Channel 240V 0.2A E-Line

***nell: MOSFET, P, LOGIC, E-LINE; Transistor Polarity: P Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: -240V; On Resistance Rds(on): 15ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power D

***S: French Electronic Distributor since 1988

***ukat: P-Ch -240V -0,2A 0,75W 9R E-Line

***et Europe: Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo

***r Electronics: Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

***p One Stop Global: Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo

***el Electronic: Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

***icroelectronics: N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in TO-92 package

***et: Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 Ammo Pack

*** Electronic Components: MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET

***r Electronics: Small Signal Field-Effect Transistor

***el Electronic: CAP CER 2200PF 250V C0G RADIAL

Market price

Part #	Mfg.	Description	Stock	Price
VN2410L-G-P013 DISTI # VN2410L-G-P013-ND	Microchip Technology Inc	MOSFET N-CH 240V 0.19A TO92-3 RoHS: Compliant Min Qty: 2000 Container: Tape & Box (TB)	Temporarily Out of Stock	2000:$0.7416
VN2410L-G-P013 DISTI # VN2410L-G-P013	Microchip Technology Inc	Trans MOSFET N-CH 240V 0.19A 3-Pin TO-92 T/R - Ammo Pack (Alt: VN2410L-G-P013) RoHS: Compliant Min Qty: 2000 Container: Ammo Pack	Americas - 0	2000:$0.5109 4000:$0.4939 8000:$0.4779 12000:$0.4629 20000:$0.4559
VN2410L-G-P013 DISTI # 70483926	Microchip Technology Inc	MOSFET,N-CHANNEL ENHANCEMENT-MODE,240V,10 Ohm3 TO-92AMMO RoHS: Compliant	0	2000:$1.0500
VN2410L-G-P013 DISTI # 689-VN2410L-G-P013	Microchip Technology Inc	MOSFET N-CH Enhancmnt Mode MOSFET RoHS: Compliant	894	1:$0.9800 10:$0.9650 25:$0.8140 100:$0.7420
VN2410L-G-P013 DISTI # VN2410L-G-P013	Microchip Technology Inc	MOSFETN-CHANNEL ENHANCEMENT-MODE240V10 Ohm RoHS: Compliant	0	1000:$0.6000 100:$0.7200 26:$0.7900 1:$0.9500

Image	Part #	Description
	Mfr.#: VN2410L-G-P013 OMO.#: OMO-VN2410L-G-P013	MOSFET N-CH Enhancmnt Mode MOSFET
	Mfr.#: VN2410L-G OMO.#: OMO-VN2410L-G	MOSFET 240V 10Ohm
	Mfr.#: VN2410L-AT OMO.#: OMO-VN2410L-AT-1190	New and Original
	Mfr.#: VN2410LS OMO.#: OMO-VN2410LS-1190	New and Original
	Mfr.#: VN2410LZL1 OMO.#: OMO-VN2410LZL1-1190	New and Original
	Mfr.#: VN2410LZL1G OMO.#: OMO-VN2410LZL1G-ON-SEMICONDUCTOR	MOSFET N-CH 240V 200MA TO-92
	Mfr.#: VN2410L___G OMO.#: OMO-VN2410L-G-1190	New and Original
	Mfr.#: VN2410L OMO.#: OMO-VN2410L-1190	MOSFET 240V 200mA N-Channel
	Mfr.#: VN2410L-G P005 OMO.#: OMO-VN2410L-G-P005-317	RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
	Mfr.#: VN2410L-G P002 OMO.#: OMO-VN2410L-G-P002-317	RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET

VN2410L-G-P013

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes