IHW25N120R2FKSA1

Mfr. #:: IHW25N120R2FKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode.
Lifecycle:: New from this manufacturer.
Datasheet:: IHW25N120R2FKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IHW25N120R2FKSA1 Datasheet IHW25N120R2FKSA1 Datasheet (P4-P6)IHW25N120R2FKSA1 Datasheet (P7-P9)IHW25N120R2FKSA1 Datasheet (P10-P12)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

Technology:: Si

Package / Case:: TO-247-3

Series:: 600V TRENCHSTOP

Packaging:: Tube

Brand:: Infineon Technologies

Product Type:: IGBT Transistors

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IHW25N120R2 IHW25N12R2XK SP000212016

Tags: IHW25N120R2, IHW25N120R, IHW25N, IHW25, IHW2, IHW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IHW25N120R2FKSA1 Description

***ical: Trans IGBT Chip N-CH 1200V 50A 365000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:1.8V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; Power Dissipation Max:365W

***ineon SCT: The 2nd generation of reverse conducting 1200 V, 25 A TRENCHSTOP™ RC-IGBT3 and Fieldstop technology with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses, PG-TO247-3, RoHS

***ineon: IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode. | Summary of Features: Best-in-class V CEsat and V f for outstanding efficiency; Lowest switching losses; Stable temperature behavior; Soft current turn-off waveforms; High breakthrough voltage; Resistance to current spikes over the SOA | Benefits: Lowest power dissipation; Better thermal management; Lower cost for heat sink, cooling and EMI filtering; Highest device safety and reliability; Reduced system costs; Best-in-class performance for competitive price

Market price

Part #	Mfg.	Description	Stock	Price
IHW25N120R2FKSA1 DISTI # V99:2348_06377991	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	236	500:$3.5270 250:$3.6910 100:$3.8470 50:$4.0110 25:$4.1720 10:$4.2740 1:$5.1656
IHW25N120R2FKSA1 DISTI # IHW25N120R2FKSA1-ND	Infineon Technologies AG	IGBT 1200V 50A 365W TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	57In Stock	25:$3.9580 10:$4.1870 1:$4.6600
IHW25N120R2FKSA1 DISTI # 31073933	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	240	240:$1.9774
IHW25N120R2FKSA1 DISTI # 26197353	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	236	3:$5.1656
IHW25N120R2FKSA1 DISTI # 13AC9003	Infineon Technologies AG	TRANSISTOR, IGBT, 1.2KV, 50A, TO-247,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:365W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes	281	500:$3.3500 250:$3.6200 100:$3.8700 50:$4.1300 25:$4.3800 10:$4.6500 1:$5.1300
IHW25N120R2 DISTI # 726-IHW25N120R2	Infineon Technologies AG	IGBT Transistors REVERSE CONDUCT IGBT 1200V 25A RoHS: Compliant	372	1:$4.4300 10:$3.7700 100:$3.2600 250:$3.1000 500:$2.7800
IHW25N120R2FKSA1 DISTI # N/A	Infineon Technologies AG	IGBT Transistors IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode.	0
IHW25N120R2FKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant	390	1000:$1.9000 500:$1.9900 100:$2.0800 25:$2.1700 1:$2.3300
IHW25N120R2FKSA1 DISTI # 8922116	Infineon Technologies AG	IGBT TRENCHSTOP NCHANNEL 1.2KV 50A TO247, PK	20	500:£2.0880 200:£2.1280 100:£2.2500 20:£2.6030 4:£3.2850
IHW25N120R2FKSA1 DISTI # 8922116P	Infineon Technologies AG	IGBT TRENCHSTOP NCHANNEL 1.2KV 50A TO247, TU	96	500:£2.0880 200:£2.1280 100:£2.2500 20:£2.6030
IHW25N120R2FKSA1 DISTI # 2725782	Infineon Technologies AG	TRANSISTOR, IGBT, 1.2KV, 50A, TO-247 RoHS: Compliant	278	10:$6.3100 1:$7.0200
IHW25N120R2FKSA1 DISTI # 2725782	Infineon Technologies AG	TRANSISTOR, IGBT, 1.2KV, 50A, TO-247	281	500:£3.1000 250:£3.1700 100:£3.2300 10:£3.3000 1:£4.0900

Image	Part #	Description
	Mfr.#: IHW25N120E1XKSA1 OMO.#: OMO-IHW25N120E1XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IHW25N120E1XKSA1 OMO.#: OMO-IHW25N120E1XKSA1-INFINEON-TECHNOLOGIES	IGBT NPT/TRENCH 1200V 50A TO247
	Mfr.#: IHW25N120E1 OMO.#: OMO-IHW25N120E1-1190	IGBT, SINGLE, 1.2KV, 50A, TO-247
	Mfr.#: IHW25N120R2 H25R1202 OMO.#: OMO-IHW25N120R2-H25R1202-1190	New and Original
	Mfr.#: IHW25N120R2,IHW30N160R2, OMO.#: OMO-IHW25N120R2-IHW30N160R2--1190	New and Original
	Mfr.#: IHW25N120R2FKSA1 OMO.#: OMO-IHW25N120R2FKSA1-INFINEON-TECHNOLOGIES	IGBT 1200V 50A 365W TO247-3
	Mfr.#: IHW25N120R2S OMO.#: OMO-IHW25N120R2S-1190	New and Original
	Mfr.#: IHW25N120R3 OMO.#: OMO-IHW25N120R3-1190	New and Original
	Mfr.#: IHW25N120T OMO.#: OMO-IHW25N120T-1190	New and Original
	Mfr.#: IHW25N120R2 OMO.#: OMO-IHW25N120R2-126	IGBT Transistors REVERSE CONDUCT IGBT 1200V 25A

IHW25N120R2FKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes