IXTP2N65X2

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

2 A

Rds On - Drain-Source Resistance:

2.3 Ohms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

4.3 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

55 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Series:

X2-Class

Brand:

IXYS

Forward Transconductance - Min:

1.1 S

Fall Time:

14 ns

Product Type:

MOSFET

Rise Time:

19 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

20 ns

Typical Turn-On Delay Time:

15 ns

Unit Weight:

0.012346 oz

Tags

IXTP2N, IXTP2, IXTP, IXT