SIHD2N80E-GE3

Name: Vishay - SIHD2N80E-GE3
Brand: Vishay
SKU: OMO-3646871
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIHD2N80E-GE3
Manufacturer:: Vishay
Description:: MOSFET N-CH 800V 2.8A DPAK
Lifecycle:: New from this manufacturer.
Datasheet:: SIHD2N80E-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SIHD2N80E-GE3 more Information

Product Attribute
Attribute Value

Tags: SIHD2, SIHD, SIH

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SIHD2N80E-GE3 Description

***et Japan: Transistor MOSFET N-CH 800V 2.8A 3-Pin TO-252

***ment14 APAC: MOSFET, N-CH, 800V, 2.8A, 150DEG C

***ark: Mosfet, N-Ch, 800V, 2.8A, 150Deg C; Transistor Polarity:n Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:800V; On Resistance Rds(On):2.38Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

SIHD2N80E-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Part #	Mfg.	Description	Stock	Price
SIHD2N80E-GE3 DISTI # SIHD2N80E-GE3-ND	Vishay Siliconix	MOSFET N-CH 800V 2.8A DPAK RoHS: Compliant Min Qty: 1 Container: Tube	1401In Stock	6000:$0.5726 3000:$0.6027 500:$0.8180 100:$0.9902 25:$1.2056 10:$1.2700 1:$1.4200
SIHD2N80E-GE3 DISTI # SIHD2N80E-GE3	Vishay Intertechnologies	E Series Power MOSFET Single N-Channel 800V VDS ±30V 2.8A ID Thin Lead 3-Pin DPAK (Alt: SIHD2N80E-GE3) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€0.5479 500:€0.5549 100:€0.5639 50:€0.5729 25:€0.6479 10:€0.7989 1:€1.1139
SIHD2N80E-GE3 DISTI # SIHD2N80E-GE3	Vishay Intertechnologies	E Series Power MOSFET Single N-Channel 800V VDS ±30V 2.8A ID Thin Lead 3-Pin DPAK - Tape and Reel (Alt: SIHD2N80E-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.5249 18000:$0.5399 12000:$0.5549 6000:$0.5789 3000:$0.5959
SIHD2N80E-GE3 DISTI # 78AC6518	Vishay Intertechnologies	MOSFET, N-CH, 800V, 2.8A, 150DEG C,Transistor Polarity:N Channel,Continuous Drain Current Id:2.8A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	2995	500:$0.7880 250:$0.8520 100:$0.9160 50:$1.0100 25:$1.1100 10:$1.2000 1:$1.4500
SIHD2N80E-GE3 DISTI # 78-SIHD2N80E-GE3	Vishay Intertechnologies	MOSFET 800V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	2729	1:$1.4400 10:$1.1900 100:$0.9070 500:$0.7800 1000:$0.6150
SIHD2N80E-GE3 DISTI # 2932923	Vishay Intertechnologies	MOSFET, N-CH, 800V, 2.8A, 150DEG C RoHS: Compliant	2995	1000:$0.9200 500:$0.9740 250:$1.1500 100:$1.4000 10:$1.7900 1:$2.1600
SIHD2N80E-GE3 DISTI # 2932923	Vishay Intertechnologies	MOSFET, N-CH, 800V, 2.8A, 150DEG C	2990	500:£0.5650 250:£0.6110 100:£0.6570 10:£0.9150 1:£1.1900

SIHD2N80E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes