2SD1898T100P

Mfr. #:: 2SD1898T100P
Manufacturer:: Rohm Semiconductor
Description:: Bipolar Transistors - BJT DVR NPN 80V 1A
Lifecycle:: New from this manufacturer.
Datasheet:: 2SD1898T100P Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ROHM Semiconductor

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Mounting Style:: SMD/SMT

Transistor Polarity:: NPN

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 80 V

Collector- Base Voltage VCBO:: 120 V

Emitter- Base Voltage VEBO:: 5 V

Maximum DC Collector Current:: 1 A

Gain Bandwidth Product fT:: 100 MHz

Maximum Operating Temperature:: + 150 C

Series:: 2SD1898

DC Current Gain hFE Max:: 82 at 500 mA, 3 V

Height:: 1.5 mm

Length:: 4.5 mm

Packaging:: Reel

Width:: 2.5 mm

Brand:: ROHM Semiconductor

Continuous Collector Current:: 1 A

DC Collector/Base Gain hfe Min:: 82

Pd - Power Dissipation:: 2000 mW

Product Type:: BJTs - Bipolar Transistors

Factory Pack Quantity:: 1000

Subcategory:: Transistors

Unit Weight:: 0.004603 oz

Tags: 2SD1898T100P, 2SD1898T100, 2SD1898T10, 2SD1898T1, 2SD1898T, 2SD1898, 2SD189, 2SD18, 2SD1, 2SD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SD1898T100P Ratings and Reviews

G***s

I recommend

2019-04-26

A***a

the support is brittle

2019-06-25

2SD1898T100P Description

***et: Trans GP BJT NPN 80V 1A 4-Pin(3+Tab) MPT T/R

***el Electronic: TRANS NPN 80V 1A SOT-89

***i-Key: TRANS NPN 80V 1A MPT3

***ca Corp: Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

*** Source Electronics: Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R / TRANS PNP 80V 1A SOT-89

***ure Electronics: BCX5316 Series 1 A 80 V SMT PNP Silicon Planar Medium Power Transistor - SOT-89

***(Formerly Allied Electronics): Trans GP BJT PNP 80V 1A (3+Tab) SOT89 | Diodes Inc BCX5316TA

***el Electronic: Bipolar Transistors - BJT PNP Medium Power

***ment14 APAC: TRANSISTOR, PNP, 80V, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:100; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:1.5A; Termination Type:SMD; Voltage Vcbo:100V

*** Stop Electro: Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

*** Source Electronics: Trans GP BJT NPN 80V 1A 1000mW 4-Pin(3+Tab) SOT-89 T/R / TRANS NPN 80V 1A SOT-89

***ure Electronics: BSR43 Series NPN 1 A 80 V SMT Silicon Medium Power Transistor - SOT-89

***(Formerly Allied Electronics): Trans GP BJT NPN 80V 1A (3+Tab) SOT89 | Diodes Inc BSR43TA

***ment14 APAC: TRANSISTOR, NPN, 80V, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; Collector Emitter Voltage Vces:250mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:500mA; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:50; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:SMD; Voltage Vcbo:90V

***ca Corp: Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

*** Source Electronics: Trans GP BJT NPN 80V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R / TRANS NPN 80V 1A SOT89

***ure Electronics: BCX56 Series 80 V 1 A NPN Silicon Planar Medium Power Transistor - SOT-89-3

***ark: Trans, Npn, 80V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCX5610TA

***et: Trans GP BJT NPN 80V 0.7A 4-Pin(3+Tab) MPT T/R

***ment14 APAC: TRANSISTOR SOT-89;BCE NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:120MHz; Power Dissipation Pd:500mW; DC Collector Current:500mA; DC Current Gain hFE:120; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:400mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:120MHz; Hfe Min:120; Package / Case:SOT-89; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Power Bipolar

***ark: TRANSISTOR SOT-89;BCE NPN; Transistor Type:Medium Power; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:80V; Current Ic Continuous a Max:500mA; Voltage, Vce Sat Max:400mV; Power Dissipation:500mW; Min Hfe:120; ft, ;RoHS Compliant: Yes

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

***et: Trans GP BJT NPN 80V 0.7A 4-Pin(3+Tab) MPT T/R

***el Electronic: IC OPAMP INSTR 2.5MHZ RRO 8SOIC

***ure Electronics: 2SD1834 Series 60 V 1 A SMT NPN Medium Power Transistor - MPT-3

***ical: Trans Darlington NPN 60V 1A 2000mW 4-Pin(3+Tab) MPT T/R

***(Formerly Allied Electronics): ROHM 2SD1834T100 NPN Darlington Transistor, 1 A 60 V HFE:2000, 3-Pin MPT | ROHM Semiconductor 2SD1834T100

***nell: TRANSISTOR SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 500mW; DC Collector Current: 500mA; DC Current Gain hFE: 2000hFE; Transistor Case Sty

***ark: TRANSISTOR SOT-89;BCE NPN; Transistor Type:Medium Power; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:60V; Current Ic Continuous a Max:500mA; Voltage, Vce Sat Max:1.5V; Power Dissipation:500mW; Min Hfe:2000; ft, ;RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
2SD1898T100P DISTI # 2SD1898T100P-ND	ROHM Semiconductor	TRANS NPN 80V 1A SOT-89 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call	1000:$0.2588
2SD1898T100P DISTI # 2SD1898T100P	ROHM Semiconductor	Trans GP BJT NPN 80V 1A 4-Pin(3+Tab) MPT T/R - Tape and Reel (Alt: 2SD1898T100P) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.1719 2000:$0.1609 4000:$0.1519 6000:$0.1429 10000:$0.1389
2SD1898T100P DISTI # 755-2SD1898T100P	ROHM Semiconductor	Bipolar Transistors - BJT DVR NPN 80V 1A RoHS: Compliant	0

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	Mfr.#: 2SD1899-Z-AZ OMO.#: OMO-2SD1899-Z-AZ-1190	Trans GP BJT NPN 60V 3A Automotive 3-Pin(2+Tab) TO-252
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Availability

Stock:: Available
On Order:: 1000
Enter Quantity:

Current price of 2SD1898T100P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.64~~; ~~$0.64~~

10: ~~$0.52~~; ~~$5.24~~

100: ~~$0.32~~; ~~$32.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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2SD1898T100P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

G***s

A***a

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes