STW13NK60Z

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

13 A

Rds On - Drain-Source Resistance:

550 mOhms

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

66 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

150 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

SuperMESH

Height:

20.15 mm

Length:

15.75 mm

Series:

STW13NK60Z

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

5.15 mm

Brand:

STMicroelectronics

Forward Transconductance - Min:

11 S

Fall Time:

12 ns

Product Type:

MOSFET

Rise Time:

14 ns

Factory Pack Quantity:

600

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

61 ns

Typical Turn-On Delay Time:

22 ns

Unit Weight:

1.340411 oz

Tags

STW13NK6, STW13NK, STW13N, STW13, STW1, STW