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HMC8411LP2FETR

HMC8411LP2FETR
Mfr. #:
HMC8411LP2FETR
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier DC- 8 GHz 15 dB Gain
Lifecycle:
New from this manufacturer.
Datasheet:
HMC8411LP2FETR Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
HMC8411LP2FETR more Information HMC8411LP2FETR Product Details
Product Attribute
Attribute Value
Manufacturer:
Analog Devices Inc.
Product Category:
RF Amplifier
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
LFCSP-6
Type:
Low Noise Amplifier
Technology:
GaAs
Operating Frequency:
0.01 GHz to 10 GHz
P1dB - Compression Point:
17 dBm
Gain:
14 dB
Operating Supply Voltage:
5 V
NF - Noise Figure:
2 dB
Test Frequency:
6 GHz to 10 GHz
OIP3 - Third Order Intercept:
33 dBm
Operating Supply Current:
55 mA
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Series:
HMC8411
Packaging:
Reel
Product:
Operational Amplifiers
Brand:
Analog Devices
Number of Channels:
1 Channel
Input Return Loss:
15 dB
Pd - Power Dissipation:
1.098 W
Product Type:
RF Amplifier
Factory Pack Quantity:
500
Subcategory:
Wireless & RF Integrated Circuits
Tags
HMC841, HMC84, HMC8, HMC
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
DC - 8 GHZ 15 DB GAIN
***log Devices
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8411LP2FE provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V supply voltage. The saturated output power (PSAT) of 19.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers. The HMC8411LP2FE also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications. The HMC8411LP2FE is housed in a RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP. Multifunction pin names may be referenced by their relevant function only. Applications Test instrumentation Military communications
RF, Microwave & Millimeter Wave ADI SLP
Part # Mfg. Description Stock Price
HMC8411LP2FETR
DISTI # V72:2272_23363481		Analog Devices IncDC - 8 GHZ 15 DB GAIN0
    HMC8411LP2FETR
    DISTI # HMC8411LP2FETR-ND    		Analog Devices IncDC - 8 GHZ 15 DB GAIN
    RoHS: Compliant
    Min Qty: 500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 500:$43.5785
    HMC8411LP2FE
    DISTI # 584-HMC8411LP2FE    		Analog Devices IncRF Amplifier DC- 8 GHz 15 dB Gain
    RoHS: Compliant    		182
    • 1:$54.7500
    • 5:$53.1000
    • 10:$51.4400
    • 25:$49.7800
    • 100:$46.1300
    HMC8411LP2FETR
    DISTI # 584-HMC8411LP2FETR    		Analog Devices IncRF Amplifier DC- 8 GHz 15 dB Gain
    RoHS: Compliant    		0
    • 500:$44.8000
    Image Part # Description
    HMC8411LP2FE

    Mfr.#: HMC8411LP2FE

    OMO.#: OMO-HMC8411LP2FE

    		 RF Amplifier DC- 8 GHz 15 dB Gain
    HMC8411LP2FETR

    Mfr.#: HMC8411LP2FETR

    OMO.#: OMO-HMC8411LP2FETR

    		 RF Amplifier DC- 8 GHz 15 dB Gain
    HMC8411LP2FE

    Mfr.#: HMC8411LP2FE

    OMO.#: OMO-HMC8411LP2FE-1190

    		 DC - 8 GHZ 15 DB GAIN
    HMC8411LP2FETR

    Mfr.#: HMC8411LP2FETR

    OMO.#: OMO-HMC8411LP2FETR-1190

    		 DC - 8 GHZ 15 DB GAIN
    Availability
    Stock:
    Available
    On Order:
    3000
    Enter Quantity:
    Current price of HMC8411LP2FETR is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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