SI9933CDY-T1-E3

Mfr. #:: SI9933CDY-T1-E3
Manufacturer:: Vishay
Description:: IGBT Transistors MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V
Lifecycle:: New from this manufacturer.
Datasheet:: SI9933CDY-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SI9933CDY-T1-E3 more Information

Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: FETs - Arrays

Series: TrenchFETR

Packaging: Digi-ReelR Alternate Packaging

Part-Aliases: SI9933CDY-E3

Unit-Weight: 0.006596 oz

Mounting-Style: SMD/SMT

Package-Case: 8-SOIC (0.154", 3.90mm Width)

Technology: Si

Operating-Temperature: -50°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: 8-SO

Configuration: Dual

FET-Type: 2 P-Channel (Dual)

Power-Max: 3.1W

Transistor-Type: 2 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

Input-Capacitance-Ciss-Vds: 665pF @ 10V

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 4A

Rds-On-Max-Id-Vgs: 58 mOhm @ 4.8A, 4.5V

Vgs-th-Max-Id: 1.4V @ 250μA

Gate-Charge-Qg-Vgs: 26nC @ 10V

Pd-Power-Dissipation: 2 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 50 C

Fall-Time: 13 ns

Rise-Time: 50 ns

Vgs-Gate-Source-Voltage: 12 V

Id-Continuous-Drain-Current: 4 A

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Rds-On-Drain-Source-Resistance: 58 mOhms

Transistor-Polarity: P-Channel

Typical-Turn-Off-Delay-Time: 29 ns

Typical-Turn-On-Delay-Time: 21 ns

Channel-Mode: Enhancement

Tags: SI9933CDY-T, SI9933CD, SI9933C, SI9933, SI993, SI99, SI9

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI9933CDY-T1-E3 Description

***ure Electronics: Si9933CDY Series Dual P-Channel 20 V 58 mOhm Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET Array Dual P-CH -20V -4A 8-Pin SOIC

***nell: MOSFET, PP CH, 20V, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:3.1W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-50°C to +150°C

SI9933CDY-T1-E3 More Information

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Part #	Mfg.	Description	Stock	Price
SI9933CDY-T1-E3 DISTI # V72:2272_09216526	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R RoHS: Compliant	227	100:$0.3264 25:$0.4045 10:$0.4093 1:$0.4844
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3CT-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3313In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3313In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3TR-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.2552
SI9933CDY-T1-E3 DISTI # 25790123	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R RoHS: Compliant	227	100:$0.3264 31:$0.4045
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9933CDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2319 5000:$0.2249 10000:$0.2159 15000:$0.2099 25000:$0.2049
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R (Alt: SI9933CDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI9933CDY-T1-E3 DISTI # 16P3887	Vishay Intertechnologies	Trans MOSFET Array Dual P-CH -20V -4A 8-Pin SOIC - Product that comes on tape, but is not reeled (Alt: 16P3887) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.6400 10:$0.5110 25:$0.4700 50:$0.4290 100:$0.3880 250:$0.3540 500:$0.3200
SI9933CDY-T1-E3 DISTI # 16P3887	Vishay Intertechnologies	DUAL P CHANNEL MOSFET, -20V, SOIC,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes	2222	1:$0.6400 10:$0.5110 25:$0.4700 50:$0.4290 100:$0.3880 250:$0.3540 500:$0.3200 1000:$0.2560
SI9933CDY-T1-E3 DISTI # 781-SI9933CDY-E3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs SO-8 RoHS: Compliant	3592	1:$0.6400 10:$0.5110 100:$0.3880 500:$0.3200 1000:$0.2560 2500:$0.2320
SI9933CDY-T1-E3 DISTI # C1S803603830148	Vishay Intertechnologies	MOSFETs RoHS: Compliant	227	100:$0.3264 25:$0.4045 10:$0.4093
SI9933CDY-T1-E3 DISTI # 2101482	Vishay Intertechnologies	MOSFET, PP CH, 20V, 8SOIC RoHS: Compliant	1894	1:$1.0200 10:$0.8090 100:$0.6150 500:$0.5070 1000:$0.4250
SI9933CDY-T1-E3 DISTI # 2101482	Vishay Intertechnologies	MOSFET, PP CH, 20V, 8SOIC RoHS: Compliant	1840	5:£0.4410 25:£0.2690 100:£0.2670 250:£0.2550 500:£0.2110

Image	Part #	Description
	Mfr.#: SI9933CDY-T1-GE3 OMO.#: OMO-SI9933CDY-T1-GE3	MOSFET -20V Vds 12V Vgs SO-8
	Mfr.#: SI9933CDY-T1-E3 OMO.#: OMO-SI9933CDY-T1-E3	MOSFET -20V Vds 12V Vgs SO-8
	Mfr.#: SI9933CDY-T1-E3 OMO.#: OMO-SI9933CDY-T1-E3-VISHAY	IGBT Transistors MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V
	Mfr.#: SI9933CDY-T1-GE3-CUT TAPE OMO.#: OMO-SI9933CDY-T1-GE3-CUT-TAPE-1190	New and Original
	Mfr.#: SI9933C OMO.#: OMO-SI9933C-1190	New and Original
	Mfr.#: SI9933CDY OMO.#: OMO-SI9933CDY-1190	New and Original
	Mfr.#: SI9933CDY-T1 OMO.#: OMO-SI9933CDY-T1-1190	New and Original
	Mfr.#: SI9933CDY-T1-GE3 OMO.#: OMO-SI9933CDY-T1-GE3-VISHAY	MOSFET 2P-CH 20V 4A 8-SOIC
	Mfr.#: SI9933CY-T1 OMO.#: OMO-SI9933CY-T1-1190	New and Original

SI9933CDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes