NVB5860NT4G

Mfr. #:: NVB5860NT4G
Manufacturer:: ON Semiconductor
Description:: RF Bipolar Transistors MOSFET NFET D2PAK 60V 169A 3MOHM
Lifecycle:: New from this manufacturer.
Datasheet:: NVB5860NT4G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NVB5860NT4G Datasheet NVB5860NT4G Datasheet (P4-P6)NVB5860NT4G Datasheet (P7)
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Tags: NVB58, NVB5, NVB

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NVB5860NT4G Description

***(Formerly Allied Electronics): NVB5860NT4G N-channel MOSFET Transistor; 220 A; 60 V; 3-Pin D2PAK

***et: Trans MOSFET N-CH 60V 220A 3-Pin D2PAK T/R

***ark: NFET D2PAK 60V 169A 3MOHM / 800 REEL

***r Electronics: Power Field-Effect Transistor, 220A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***(Formerly Allied Electronics): IRFS7730PBF N-channel MOSFET Transistor; 246 A; 75 V; 3-Pin D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 75 V 2.6 mOhm 271 nC HEXFET® Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH Si 75V 246A 3-Pin(2+Tab) D2PAK Tube

***nell: MOSFET, N-CH, 75V, 195A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 246A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7

***ineon: Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

***ure Electronics: AUIRFS3107 Series 75 V 195 A 370 W SMT HEXFET® Power MOSFET - D2PAK-3

***ineon SCT: Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 75V 230A Automotive 3-Pin(2+Tab) D2PAK T/R

***(Formerly Allied Electronics): Transistor MOSFET N-ch 75V 160A D2PAK

***nell: MOSFET, AEC-Q101, N-CH, 75V, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 370W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

*** Stop Electro: Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Braking; Brushed Motor Drive; Brushless Motor Drive; Exhaust; HV DC-DC Converter; SMPS Injector; Solenoid Injection

***icroelectronics: N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package

***ical: Trans MOSFET N-CH 60V 180A 3-Pin(2+Tab) H2PAK T/R

*** Electronic Components: MOSFET N-Ch 60V 0.0016 Ohm 180A STripFET DG VI

***ark: Mosfet, N Ch, 60V, 180A, H2Pak-2; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:180A; On Resistance Rds(On):0.0016Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 180A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***icroelectronics SCT: Power MOSFETs, 60V, 180A, H2PAK-2, Tape and Reel

***icroelectronics: Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET

***ical: Trans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R

***nell: MOSFET, N CH, 100V, 180A, H2PAK-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V

***icroelectronics: N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

***ical: Trans MOSFET N-CH 80V 180A 3-Pin(2+Tab) H2PAK T/R

***(Formerly Allied Electronics): MOSFET N-Ch 80V 180A STripFET H2PAK2

*** Electronic Components: MOSFET N-CH 80V 17mOhm 180A STripFET VII

***r Electronics: Power Field-Effect Transistor, 180A I(D), 80V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, N-CH, 80V, 180A, 175DEG C, 315W; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 315W; Transistor Case Style: H2PAK-2; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET F7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***icroelectronics SCT: Power MOSFETs, 80V, 180A, H2PAK-2, Tape and Reel

Market price

Part #	Mfg.	Description	Stock	Price
NVB5860NT4G DISTI # NVB5860NT4G-ND	ON Semiconductor	MOSFET N-CH 60V 169A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Limited Supply - Call
NVB5860NT4G DISTI # NVB5860NT4G	ON Semiconductor	Trans MOSFET N-CH 60V 220A 3-Pin D2PAK T/R (Alt: NVB5860NT4G) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0
NVB5860NT4G DISTI # NVB5860NT4G	ON Semiconductor	Trans MOSFET N-CH 60V 220A 3-Pin D2PAK T/R - Bulk (Alt: NVB5860NT4G) Min Qty: 138 Container: Bulk	Americas - 0	138:$2.2900 140:$2.2900 278:$2.2900 690:$2.2900 1380:$2.1900
NVB5860NT4G DISTI # 70547324	ON Semiconductor	NVB5860NT4G N-channel MOSFET Transistor,220 A,60 V,3-Pin D2PAK RoHS: Compliant	0	50:$2.3400 100:$2.2200
NVB5860NT4G DISTI # 863-NVB5860NT4G	ON Semiconductor	MOSFET NFET D2PAK 60V 169A 3MOHM RoHS: Compliant	0
NVB5860NT4G	ON Semiconductor	Power Field-Effect Transistor, 220A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	5600	1000:$2.4000 500:$2.5200 100:$2.6200 25:$2.7400 1:$2.9500
NVB5860NT4G DISTI # 8234157P	ON Semiconductor	MOSFET N-CHANNEL 60V 220A 3MOHM D2PAK, RL	485	100:£1.4560 50:£1.6400

Image	Part #	Description
	Mfr.#: NVB5860N OMO.#: OMO-NVB5860N-1190	New and Original
	Mfr.#: NVB5860NL OMO.#: OMO-NVB5860NL-1190	New and Original
	Mfr.#: NVB5860NLT4G OMO.#: OMO-NVB5860NLT4G-ON-SEMICONDUCTOR	MOSFET N-CH 60V 169A D2PAK
	Mfr.#: NVB5860NT4G OMO.#: OMO-NVB5860NT4G-ON-SEMICONDUCTOR	RF Bipolar Transistors MOSFET NFET D2PAK 60V 169A 3MOHM

NVB5860NT4G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes