A3T21H360W23SR6

A3T21H360W23SR6
Mfr. #:
A3T21H360W23SR6
Manufacturer:
NXP Semiconductors
Description:
AIRFAST RF POWER LDMOS TRANSISTO
Lifecycle:
New from this manufacturer.
Datasheet:
A3T21H360W23SR6 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
A3T21H360W23SR6 more Information A3T21H360W23SR6 Product Details
Product Attribute
Attribute Value
Tags
A3T21, A3T2, A3T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
Part # Mfg. Description Stock Price
A3T21H360W23SR6
DISTI # V36:1790_18998405
NXP SemiconductorsRF POWER TRANSISTOR0
  • 150000:$86.5700
  • 75000:$86.5800
  • 15000:$89.1500
  • 1500:$95.5300
  • 150:$96.7200
A3T21H360W23SR6
DISTI # A3T21H360W23SR6-ND
NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 150:$96.7176
A3T21H360W23SR6
DISTI # A3T21H360W23SR6
Avnet, Inc.RF Power Lateral MOSFET N-Channel Enhancement Mode LDMOS Transistor 28 V 600 mA 56 W 4-Pin ACP-1230S T/R - Tape and Reel (Alt: A3T21H360W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Reel
Americas - 0
  • 1500:$92.4900
  • 900:$94.2900
  • 600:$97.7900
  • 300:$101.7900
  • 150:$105.9900
A3T21H360W23SR6
DISTI # 771-A3T21H360W23SR6
NXP SemiconductorsRF MOSFET Transistors A3T21H360W23S/CFM6F///REEL 13 Q2 NDP
RoHS: Compliant
0
  • 1:$116.3600
  • 5:$114.2200
  • 10:$109.0800
  • 25:$105.4400
  • 100:$98.1800
  • 150:$89.9700
A3T21H360W23SR6
DISTI # A3T21H360W23SR6
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 150:$109.0800
Image Part # Description
A3T21H360W23SR6

Mfr.#: A3T21H360W23SR6

OMO.#: OMO-A3T21H360W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V
A3T21H360W23S

Mfr.#: A3T21H360W23S

OMO.#: OMO-A3T21H360W23S-1190

New and Original
A3T21H360W23SR6

Mfr.#: A3T21H360W23SR6

OMO.#: OMO-A3T21H360W23SR6-NXP-SEMICONDUCTORS

AIRFAST RF POWER LDMOS TRANSISTO
Availability
Stock:
Available
On Order:
3000
Enter Quantity:
Current price of A3T21H360W23SR6 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$134.96
$134.96
10
$128.21
$1 282.07
100
$121.46
$12 145.95
500
$114.71
$57 355.90
1000
$107.96
$107 964.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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