IPD60R380P6ATMA1

Mfr. #:: IPD60R380P6ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 600V 10.6A DPAK-2
Lifecycle:: New from this manufacturer.
Datasheet:: IPD60R380P6ATMA1 Datasheet
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More Information:: IPD60R380P6ATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Configuration:: Single

Tradename:: CoolMOS

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Series:: CoolMOS P6

Transistor Type:: 1 N-Channel

Width:: 6.22 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Part # Aliases:: IPD60R380P6 SP001135814

Unit Weight:: 0.139332 oz

Tags: IPD60R380P, IPD60R380, IPD60R38, IPD60R3, IPD60R, IPD60, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

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IPD60R380P6ATMA1 Description

***ark: MOSFET Transistor, N Channel, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V

***ure Electronics: N-Channel 6000 V 380 mOhm 19 nC CoolMOS P6 Power Transistor - DPAK-3

***el Electronic: 0402 10 nF 50V ±10% Tolerance X7R Surface Mount Multilayer Ceramic Capacitor

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 600V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.342ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***ical: Trans MOSFET N-CH 600V 9.1A 3-Pin(2+Tab) DPAK T/R

***i-Key Marketplace: COOLMOS N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***ical: Trans MOSFET N-CH 700V 10.6A Automotive 3-Pin(2+Tab) DPAK T/R

***nell: MOSFET, N-CH, 650V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS E6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

*** Stop Electro: Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

*** Source Electronics: Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / CoolMOS Power Transistor

*** Stop Electro: Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***ment14 APAC: MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:650V; On Resistance Rds(on):385mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9A; Package / Case:TO-252; Power Dissipation Pd:83W; Pulse Current Idm:27A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package

***ark: MOSFET, N-CH, 600V, 11A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 600V, 11A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***icroelectronics: N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package

***ark: Mosfet, N-Ch, 650V, 11A, To-252 Rohs Compliant: Yes

***el Electronic: Cap Ceramic 0.047uF 500V X7R 20% SMD 1812 125C Embossed T/R

***icroelectronics SCT: Power MOSFETs, 650V, 11A, DPAK, Tape and Reel

***enic: 650V 11A 320m´Î@10V5.5A 110W 3V@250uA 1.1pF@100V N Channel 718pF@100V 19.5nC@10V -55¡Í~+150¡Í@(Tj) DPAK MOSFETs ROHS

***icroelectronics: N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package

***et: Trans MOSFET N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R

*** Electronic Components: MOSFET N-Ch 650V 0.425Ohm 11A pwr MDMesh II

***ure Electronics: MOSFET N-Ch 600 Volt 11 Amp Power MDmesh

***ow.cn: STD11NM65N STMicroelectronics Transistors MOSFETs N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com

***r Electronics: Power Field-Effect Transistor, 11A I(D), 650V, 0.455ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***el Electronic: IC BUFFER NON-INVERT 6V 14TSSOP

IPD60R380P6ATMA1 More Information

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Part #	Mfg.	Description	Stock	Price
IPD60R380P6ATMA1 DISTI # V72:2272_06383827	Infineon Technologies AG	Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	1:$0.7549
IPD60R380P6ATMA1 DISTI # V36:1790_06383827	Infineon Technologies AG	Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0	2500:$0.7213
IPD60R380P6ATMA1 DISTI # IPD60R380P6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V DPAK-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	12500:$0.7120 5000:$0.7273 2500:$0.7553
IPD60R380P6ATMA1 DISTI # IPD60R380P6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V DPAK-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.8356 500:$1.0084 100:$1.2274 10:$1.5270 1:$1.7000
IPD60R380P6ATMA1 DISTI # IPD60R380P6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V DPAK-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.8356 500:$1.0084 100:$1.2274 10:$1.5270 1:$1.7000
IPD60R380P6ATMA1 DISTI # IPD60R380P6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R380P6ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.6459 15000:$0.6569 10000:$0.6799 5000:$0.7059 2500:$0.7319
IPD60R380P6ATMA1 DISTI # SP001135814	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 10.6A 3-Pin TO-252 T/R (Alt: SP001135814) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.6049 15000:€0.6509 10000:€0.7049 5000:€0.7699 2500:€0.9409
IPD60R380P6ATMA1 DISTI # 34AC1680	Infineon Technologies AG	MOSFET, N-CH, 600V, 10.6A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:10.6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.342ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	0	1000:$0.7450 500:$0.9000 250:$0.9600 100:$1.0200 50:$1.1100 25:$1.2000 10:$1.2800 1:$1.5000
IPD60R380P6ATMA1 DISTI # 726-IPD60R380P6ATMA1	Infineon Technologies AG	MOSFET N-Ch 600V 10.6A DPAK-2 RoHS: Compliant	135	1:$1.4900 10:$1.2700 100:$1.0100 500:$0.8910 1000:$0.7380
IPD60R380P6ATMA1 DISTI # 2781169	Infineon Technologies AG	MOSFET, N-CH, 600V, 10.6A, TO-252 RoHS: Compliant	0	5000:$1.0400 1000:$1.1000 500:$1.1600 250:$1.3400 100:$1.5900 25:$1.9400 5:$2.2300
IPD60R380P6ATMA1 DISTI # 2781169	Infineon Technologies AG	MOSFET, N-CH, 600V, 10.6A, TO-252	0	100:£0.9730 25:£1.2200 5:£1.3500

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IPD60R380P6ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes