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SISF02DN-T1-GE3

SISF02DN-T1-GE3
Mfr. #:
SISF02DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET Common Drain Dual N-Channel 25 V (S1-S2) MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
SISF02DN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SISF02DN-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-1212-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
2.15 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.1 V
Vgs - Gate-Source Voltage:
- 16 V, 20 V
Qg - Gate Charge:
51 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
52 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
PowerPAK
Packaging:
Reel
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
105 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
17 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
25 ns
Typical Turn-On Delay Time:
24 ns
Tags
SISF, SIS
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
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Availability
Stock:
47
On Order:
2030
Enter Quantity:
Current price of SISF02DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.57
$1.57
10
$1.29
$12.90
100
$0.99
$99.30
500
$0.85
$427.00
1000
$0.67
$674.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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