SI4410DYPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

10 A

Rds On - Drain-Source Resistance:

20 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

30 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.5 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

1.75 mm

Length:

4.9 mm

Transistor Type:

1 N-Channel

Type:

HEXFET Power MOSFET

Width:

3.9 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

35 S

Fall Time:

44 ns

Product Type:

MOSFET

Rise Time:

7.7 ns

Factory Pack Quantity:

3800

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

38 ns

Typical Turn-On Delay Time:

11 ns

Part # Aliases:

SP001563080

Unit Weight:

0.019048 oz

Tags

SI4410DY, SI4410D, SI4410, SI441, SI44, SI4