PartNumber | SI4410DYTRPBF | SI4410DYPBF | SI4410DY |
Description | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | MOSFET N-CH 30V 10A 8-SOIC |
Manufacturer | Infineon | Infineon | NXP |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 10 A | 10 A | - |
Rds On Drain Source Resistance | 20 mOhms | 20 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 30 nC | 30 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2.5 W | 2.5 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Tube | - |
Height | 1.75 mm | 1.75 mm | - |
Length | 4.9 mm | 4.9 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | HEXFET Power MOSFET | HEXFET Power MOSFET | - |
Width | 3.9 mm | 3.9 mm | - |
Brand | Infineon Technologies | Infineon / IR | - |
Fall Time | 44 ns | 44 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 7.7 ns | 7.7 ns | - |
Factory Pack Quantity | 4000 | 3800 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 38 ns | 38 ns | - |
Typical Turn On Delay Time | 11 ns | 11 ns | - |
Part # Aliases | SP001563088 | SP001563080 | - |
Unit Weight | 0.019048 oz | 0.019048 oz | - |
Vgs th Gate Source Threshold Voltage | - | 1 V | - |
Forward Transconductance Min | - | 35 S | - |