SI441

SI4410DYTRPBF vs SI4410DYPBF vs SI4410DY

 
PartNumberSI4410DYTRPBFSI4410DYPBFSI4410DY
DescriptionMOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nCMOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nCMOSFET N-CH 30V 10A 8-SOIC
ManufacturerInfineonInfineonNXP
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current10 A10 A-
Rds On Drain Source Resistance20 mOhms20 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge30 nC30 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelTube-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeHEXFET Power MOSFETHEXFET Power MOSFET-
Width3.9 mm3.9 mm-
BrandInfineon TechnologiesInfineon / IR-
Fall Time44 ns44 ns-
Product TypeMOSFETMOSFET-
Rise Time7.7 ns7.7 ns-
Factory Pack Quantity40003800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time38 ns38 ns-
Typical Turn On Delay Time11 ns11 ns-
Part # AliasesSP001563088SP001563080-
Unit Weight0.019048 oz0.019048 oz-
Vgs th Gate Source Threshold Voltage-1 V-
Forward Transconductance Min-35 S-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
SI4410DYTRPBF MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC
SI4410DY MOSFET N-CH 30V 10A 8-SOIC
SI4410DYPBF MOSFET N-CH 30V 10A 8-SOIC
SI4410DYTRPBF MOSFET N-CH 30V 10A 8-SOIC
Vishay / Siliconix
Vishay / Siliconix
SI4410BDY-T1-E3 MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3
SI4411DY-T1-E3 MOSFET RECOMMENDED ALT 781-SI4459ADY-T1-GE3
SI4410BDY-T1-GE3 MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3
Infineon / IR
Infineon / IR
SI4410DYPBF MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC
Vishay
Vishay
SI4411DY-T1-E3 MOSFET 30V 13A 3.0W 10mohm @ 10V
SI4410BDY-T1-E3 MOSFET N-CH 30V 7.5A 8-SOIC
SI4410BDY-T1-GE3 MOSFET N-CH 30V 7.5A 8-SOIC
SI4410BDY-T1-E3-CUT TAPE New and Original
SI4410DYTRPBF-CUT TAPE New and Original
SI4410 New and Original
SI4410-T1-E3 New and Original
SI4410/B New and Original
SI4410A New and Original
SI4410AU New and Original
SI4410B New and Original
SI4410BD New and Original
SI4410BDY Transistor: N-MOSFET, unipolar, 30V, 8A, 2.5W, SO8
SI4410BDY-71-E3 New and Original
SI4410BDY-T1 INSTOCK
SI4410BDY-T1-E3 GE3 New and Original
SI4410BDY-Y1-GE3 New and Original
SI4410DX New and Original
SI4410DY+118 New and Original
SI4410DY-NL New and Original
SI4410DY-REVA MOSFET 30V 10A 2.5W
SI4410DY-T1 MOSFET Transistor, N-Channel, SO
SI4410DY-T1--E3 New and Original
SI4410DY-T1-A-E3 MOSFET 30V 10A 2.5W
SI4410DY-T1-E3 New and Original
SI4410DY-T1-E3. New and Original
SI4410DY-T1-GE3 New and Original
SI4410DY-T1-JIT New and Original
SI4410DY-T1-REV/A New and Original
SI4410DY-T1-REVA MOSFET 30V 10A 2.5W
SI4410DY-T1REVA New and Original
SI4410DY-TI New and Original
SI4410DY-TI-E3 New and Original
SI4410DY-TR New and Original
SI4410DY518 Now Nexperia SI4410DY - Power Field-Effect Transistor, SO8
SI4410DYTR 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
SI4410DYTRPB New and Original
SI4410TRPBF New and Original
SI4410V New and Original
SI4410XDY-T1 New and Original
SI4411DY Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
NXP Semiconductors
NXP Semiconductors
SI4410DY,518 MOSFET N-CH 30V SOT96-1
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