A2T21H360-23NR6

A2T21H360-23NR6
Mfr. #:
A2T21H360-23NR6
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V
Lifecycle:
New from this manufacturer.
Datasheet:
A2T21H360-23NR6 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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HTML Datasheet:
A2T21H360-23NR6 DatasheetA2T21H360-23NR6 Datasheet (P4-P6)A2T21H360-23NR6 Datasheet (P7-P9)A2T21H360-23NR6 Datasheet (P10-P12)A2T21H360-23NR6 Datasheet (P13-P15)A2T21H360-23NR6 Datasheet (P16-P17)
ECAD Model:
More Information:
A2T21H360-23NR6 more Information A2T21H360-23NR6 Product Details
Product Attribute
Attribute Value
Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
RoHS:
Y
Transistor Polarity:
Dual N-Channel
Technology:
Si
Id - Continuous Drain Current:
2.4 A
Vds - Drain-Source Breakdown Voltage:
- 500 mV, 5 V
Gain:
16.8 dB
Output Power:
63 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
OM-1230-4
Packaging:
Reel
Operating Frequency:
2110 MHz to 2200 MHz
Type:
RF Power MOSFET
Brand:
NXP Semiconductors
Number of Channels:
2 Channel
Moisture Sensitive:
Yes
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
150
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage:
0.8 V
Part # Aliases:
935322358528
Unit Weight:
0.186807 oz
Tags
A2T21H3, A2T21H, A2T21, A2T2, A2T
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
A2T21H360-23NR6
DISTI # A2T21H360-23NR6-ND
NXP SemiconductorsRF TRANS 2.1GHZ 360W OM1230-4L2S
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 150:$119.3522
A2T21H360-23NR6
DISTI # A2T21H360-23NR6
Avnet, Inc.Trans MOSFET N-CH -0.5V/65V 1.4A/2.4A 6-Pin OM-1230 T/R - Tape and Reel (Alt: A2T21H360-23NR6)
RoHS: Compliant
Min Qty: 150
Container: Reel
Americas - 0
  • 1500:$114.0900
  • 900:$116.2900
  • 600:$120.6900
  • 300:$125.5900
  • 150:$130.7900
A2T21H360-23NR6
DISTI # A2T21H360-23NR6
Avnet, Inc.Trans MOSFET N-CH -0.5V/65V 1.4A/2.4A 6-Pin OM-1230 T/R (Alt: A2T21H360-23NR6)
RoHS: Compliant
Min Qty: 150
Container: Tape and Reel
Europe - 0
  • 1500:€111.9900
  • 900:€116.0900
  • 600:€117.4900
  • 300:€119.5900
  • 150:€121.3900
A2T21H360-23NR6
DISTI # 771-A2T21H360-23NR6
NXP SemiconductorsRF MOSFET Transistors A2T21H360-23N/FM6F///REEL 13 Q2 DP
RoHS: Compliant
0
  • 150:$111.0300
A2T21H360-23NR6
DISTI # A2T21H360-23NR6
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
92
  • 1:$150.0500
  • 10:$138.6900
  • 25:$134.6100
Image Part # Description
A2T21H360-24SR6

Mfr.#: A2T21H360-24SR6

OMO.#: OMO-A2T21H360-24SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V
A2T21H360-23NR6

Mfr.#: A2T21H360-23NR6

OMO.#: OMO-A2T21H360-23NR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V
A2T21H360-24SR6

Mfr.#: A2T21H360-24SR6

OMO.#: OMO-A2T21H360-24SR6-NXP-SEMICONDUCTORS

IC TRANS RF LDMOS
A2T21H360-23NR6

Mfr.#: A2T21H360-23NR6

OMO.#: OMO-A2T21H360-23NR6-NXP-SEMICONDUCTORS

RF TRANS 2.1GHZ 360W OM1230-4L2S
A2T21H360-23N

Mfr.#: A2T21H360-23N

OMO.#: OMO-A2T21H360-23N-1190

New and Original
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of A2T21H360-23NR6 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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