BUK663R7-75C

Mfr. #:: BUK663R7-75C
Manufacturer:: Nexperia
Description:
Lifecycle:: New from this manufacturer.
Datasheet:: BUK663R7-75C Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: BUK663R7, BUK663, BUK66, BUK6, BUK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BUK663R7-75C Description

***ical: Trans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK

***ark: Mosfet,N Channel,75V,120A,Sot404

***nell: MOSFET,N CH,75V,120A,SOT404; Transistor Polarity:N Channel; Drain Source Voltage Vds:75V; On State Resistance:3.4mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:16V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; Current Id Max:120A; Power Dissipation Pd:306W

***(Formerly Allied Electronics): SMP3003-DL-1E P-channel MOSFET Transistor; 100 A; 75 V; 2+Tab-Pin TO-263

***emi: P-Channel Power MOSFET -75V, -100A, 8mΩ

***ment14 APAC: MOSFET, P-CH, -75V, -100A, TO-263-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-100A; Source Voltage Vds:-75V; On Resistance

***r Electronics: Power Field-Effect Transistor, 100A I(D), 75V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, P-CH, -75V, -100A, TO-263-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -100A; Drain Source Voltage Vds: -75V; On Resistance Rds(on): 0.0062ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 90W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***et: Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) TO-263

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***ure Electronics: Single N-Channel 60 V 3.4 mOhm 59 nC OptiMOS Power Mosfet - D2PAK

***p One Stop: Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R

*** Stop Electro: Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS

***ment14 APAC: MOSFET, N CH, 90A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Current Id Max:90A; Power Dissipation Pd:167W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 90 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 3.4 / Gate-Source Voltage V = 20 / Fall Time ns = 13 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 64 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 167

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ical: Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 1.6pF 100volts C0G +/-0.25pF

***ment14 APAC: MOSFET, N CH, 80A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:136W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:136W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

***ure Electronics: Single P-Channel 60 V 0.28 Ohms Flange Mount Power Mosfet - TO-263

***ical: Trans MOSFET P-CH Si 60V 11A 3-Pin(2+Tab) D2PAK

*** Stop Electro: Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, P, 60V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:60V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:60W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-262AB; Current Id Max:-11A; Package / Case:D2-PAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:44A; Termination Type:SMD; Voltage Vds Typ:-60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***emi: P-Channel Power MOSFET, QFET®, -60 V, -27 A, 70 mΩ, D2PAK

***ure Electronics: P-Channel 60 V 70 mOhm Surface Mount Mosfet - D2PAK-3

*** Electronics: ON SEMICONDUCTOR - FQB27P06TM - MOSFET Transistor, P Channel, 27 A, -60 V, 0.055 ohm, -10 V, -4 V

***ical: Trans MOSFET P-CH 60V 27A 3-Pin (2+Tab) D2PAK T/R

*** Stop Electro: Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:120W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:-27A; Package / Case:D2-PAK; Power Dissipation Pd:120W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

***rchild Semiconductor: This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Market price

Part #	Mfg.	Description	Stock	Price
BUK663R7-75C,118 DISTI # 1727-5524-1-ND	Nexperia	MOSFET N-CH 75V 120A D2PAK RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
BUK663R7-75C,118 DISTI # 1727-5524-6-ND	Nexperia	MOSFET N-CH 75V 120A D2PAK RoHS: Not compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BUK663R7-75C,118 DISTI # 1727-5524-2-ND	Nexperia	MOSFET N-CH 75V 120A D2PAK RoHS: Not compliant Min Qty: 4800 Container: Tape & Reel (TR)	Temporarily Out of Stock	4800:$0.9821
BUK663R7-75C118 DISTI # BUK663R7-75C118	Avnet, Inc.	- Bulk (Alt: BUK663R7-75C118) Min Qty: 338 Container: Bulk	Americas - 0	3380:$0.8909 1690:$0.9129 1014:$0.9359 676:$0.9609 338:$0.9729
BUK663R7-75C,118 DISTI # BUK663R7-75C,118	Nexperia	Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: BUK663R7-75C,118) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	8000:€0.8269 4800:€0.8859 3200:€0.9539 1600:€1.0339 800:€1.2399
BUK663R7-75C,118 DISTI # BUK663R7-75C,118	Nexperia	Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: BUK663R7-75C,118) RoHS: Compliant Min Qty: 4800 Container: Reel	Americas - 0	48000:$0.8889 24000:$0.9109 14400:$0.9339 9600:$0.9579 4800:$0.9709
BUK663R7-75C,118 DISTI # 27T2678	Nexperia	MOSFET,N CHANNEL,75V,120A,SOT404,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes	3136	500:$1.3100 100:$1.4900 10:$1.8700 1:$2.2000
BUK663R7-75C,118 DISTI # 771-BUK663R775C118	Nexperia	MOSFET N-CHAN 75V 120A RoHS: Compliant	4800	1:$2.1800 10:$1.8500 100:$1.4800 500:$1.3000 800:$1.0800 2400:$0.9970 4800:$0.9600
BUK663R7-75C118	NXP Semiconductors	Now Nexperia BUK663R7-75C - Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	98	1000:$0.9700 500:$1.0300 100:$1.0700 25:$1.1100 1:$1.2000
BUK663R7-75C,118 DISTI # 1863311	Nexperia	MOSFET,N CH,75V,120A,SOT404 RoHS: Compliant	4635	100:£1.4800 10:£1.8800 1:£2.4700
BUK663R7-75C,118 DISTI # 1863311	Nexperia	MOSFET,N CH,75V,120A,SOT404 RoHS: Compliant	3136	25:$2.2500 10:$3.1100 1:$3.6000

Image	Part #	Description
	Mfr.#: BUK663R7-75C,118 OMO.#: OMO-BUK663R7-75C-118	MOSFET N-CHAN 75V 120A
	Mfr.#: BUK663R5-30C,118 OMO.#: OMO-BUK663R5-30C-118	MOSFET N-CHAN 30V 100A
	Mfr.#: BUK663R2-40C,118 OMO.#: OMO-BUK663R2-40C-118	MOSFET N-CHAN 40V 100A
	Mfr.#: BUK663R2-40C OMO.#: OMO-BUK663R2-40C-1190	New and Original
	Mfr.#: BUK663R5-30C OMO.#: OMO-BUK663R5-30C-1190	New and Original
	Mfr.#: BUK663R5-30C118 OMO.#: OMO-BUK663R5-30C118-1190	- Bulk (Alt: BUK663R5-30C118)
	Mfr.#: BUK663R5-55C118 OMO.#: OMO-BUK663R5-55C118-1190	- Bulk (Alt: BUK663R5-55C118)
	Mfr.#: BUK663R7-75C OMO.#: OMO-BUK663R7-75C-1190	New and Original
	Mfr.#: BUK663R7-75C118 OMO.#: OMO-BUK663R7-75C118-1190	- Bulk (Alt: BUK663R7-75C118)
	Mfr.#: BUK663R2-40C,118 OMO.#: OMO-BUK663R2-40C-118-NEXPERIA	RF Bipolar Transistors MOSFET N-CHAN 40V 100A

BUK663R7-75C

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes