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CSD13306WT

CSD13306WT
Mfr. #:
CSD13306WT
Description:
MOSFET 12V N-Channel NexFET Power MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
CSD13306WT Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CSD13306WT more Information CSD13306WT Product Details
Product Attribute
Attribute Value
Manufacturer:
Texas Instruments
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DSBGA-6
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
12 V
Id - Continuous Drain Current:
3.5 A
Rds On - Drain-Source Resistance:
10.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
700 mV
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
8.6 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.9 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
NexFET
Packaging:
Reel
Height:
0.62 mm
Length:
1.5 mm
Series:
CSD13306W
Transistor Type:
1 N-Channel
Width:
1 mm
Brand:
Texas Instruments
Forward Transconductance - Min:
15 S
Fall Time:
8 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
250
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
20 ns
Typical Turn-On Delay Time:
7 ns
Unit Weight:
0.000060 oz
Tags
CSD1330, CSD133, CSD13, CSD1, CSD
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
12V, N ch NexFET MOSFET™, single WLP 1.0x1.5, 10.2mOhm 6-DSBGA -55 to 150
***et
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
***i-Key
MOSFET N-CH 12V 6DSBGA
***AS
This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Part # Description Stock Price
CSD13306WT
DISTI # 296-41134-1-ND		MOSFET N-CH 12V 6DSBGA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1880In Stock
  • 100:$0.4202
  • 10:$0.5600
  • 1:$0.6700
CSD13306WT
DISTI # 296-41134-6-ND		MOSFET N-CH 12V 6DSBGA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1880In Stock
  • 100:$0.4202
  • 10:$0.5600
  • 1:$0.6700
CSD13306WT
DISTI # 296-41134-2-ND		MOSFET N-CH 12V 6DSBGA
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		1750In Stock
  • 1250:$0.2312
  • 750:$0.2584
  • 500:$0.2992
  • 250:$0.3536
CSD13306WT
DISTI # CSD13306WT		Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R (Alt: CSD13306WT)
RoHS: Compliant
Min Qty: 250
Container: Tape and Reel		Asia - 0
    CSD13306WT
    DISTI # CSD13306WT    		Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R - Tape and Reel (Alt: CSD13306WT)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel    		Americas - 0
    • 2000:$0.1969
    • 2500:$0.1869
    • 4500:$0.1809
    • 10000:$0.1749
    • 20000:$0.1699
    CSD13306WTCSD13306W 12 V N-Channel NexFET&#153,Power MOSFET500
    • 1000:$0.1600
    • 750:$0.1700
    • 500:$0.2200
    • 250:$0.2700
    • 100:$0.2900
    • 25:$0.3400
    • 10:$0.3600
    • 1:$0.4100
    CSD13306W
    DISTI # 595-CSD13306W    		MOSFET CSD13306W 12 V N-Channel NexFET Power MOSFET 6-DSBGA
    RoHS: Compliant    		3100
    • 1:$0.5200
    • 10:$0.4300
    • 100:$0.2620
    • 1000:$0.2030
    • 3000:$0.1730
    • 9000:$0.1610
    • 24000:$0.1530
    • 45000:$0.1490
    CSD13306WT
    DISTI # 595-CSD13306WT    		MOSFET 12V N-Channel NexFET Power MOSFET
    RoHS: Compliant    		0
    • 1:$0.5900
    • 10:$0.4900
    • 100:$0.3000
    • 250:$0.3000
    • 1000:$0.2320
    • 2500:$0.1980
    • 10000:$0.1840
    • 25000:$0.1750
    CSD13306WTSmall Signal Field-Effect Transistor
    RoHS: Compliant    		250
    • 1000:$0.1800
    • 500:$0.1900
    • 100:$0.2000
    • 25:$0.2100
    • 1:$0.2300
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    Availability
    Stock:
    Available
    On Order:
    1985
    Enter Quantity:
    Current price of CSD13306WT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.59
    $0.59
    10
    $0.49
    $4.90
    100
    $0.30
    $30.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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