PartNumber | CSD13303W1015 | CSD13302W | CSD13302WT |
Description | MOSFET N-CH NexFET Pwr MOSFET | MOSFET 12V, N ch NexFET MOSFETG , single WLP 1.0x1.0, 17.1mOhm 4-DSBGA | MOSFET 12V, N ch NexFET MOSFETG , single WLP 1.0x1.0, 17.1mOhm 4-DSBGA -55 to 150 |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | DSBGA-6 | DSBGA-4 | DSBGA-4 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 12 V | - | 12 V |
Id Continuous Drain Current | 3.5 A | 1.6 A | 1.6 A |
Rds On Drain Source Resistance | 20 mOhms | 17.1 mOhms | 17.1 mOhms |
Vgs th Gate Source Threshold Voltage | 850 mV | - | 700 mV |
Vgs Gate Source Voltage | 8 V | - | 10 V |
Qg Gate Charge | 3.9 nC | - | 7.8 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 1.65 W | - | 1.8 W |
Configuration | Single | Single | Single |
Tradename | NexFET | NexFET | NexFET |
Packaging | Reel | Reel | Reel |
Height | 0.625 mm | 0.62 mm | 0.62 mm |
Length | 1.5 mm | 1 mm | 1 mm |
Series | CSD13303W1015 | CSD13302W | CSD13302W |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 1 mm | 1 mm | 1 mm |
Brand | Texas Instruments | Texas Instruments | Texas Instruments |
Forward Transconductance Min | 14 S | - | 10 S |
Fall Time | 3.2 ns | - | 7 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | - | 7 ns |
Factory Pack Quantity | 3000 | 3000 | 250 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 14.7 ns | - | 17 ns |
Typical Turn On Delay Time | 4.6 ns | - | 6 ns |
Unit Weight | 0.000060 oz | 0.007055 oz | 0.007055 oz |
Channel Mode | - | - | Enhancement |