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IGZ75N65H5XKSA1

IGZ75N65H5XKSA1
Mfr. #:
IGZ75N65H5XKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT 650V 75A SGL TO-247-4
Lifecycle:
New from this manufacturer.
Datasheet:
IGZ75N65H5XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
IGZ75N65H5XKSA1 more Information
Product Attribute
Attribute Value
Tags
IGZ
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube
***ronik
IGBT 650V 75A 1,65V TO247-3
***i-Key
IGBT 650V 75A SGL TO-247-4
***ineon
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Part # Mfg. Description Stock Price
IGZ75N65H5XKSA1
DISTI # IGZ75N65H5XKSA1-ND		Infineon Technologies AGIGBT 650V 75A SGL TO-247-4
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$4.7490
IGZ75N65H5XKSA1
DISTI # IGZ75N65H5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube - Bulk (Alt: IGZ75N65H5XKSA1)
Min Qty: 115
Container: Bulk		Americas - 0
  • 1150:$2.6900
  • 575:$2.7900
  • 345:$2.8900
  • 230:$2.9900
  • 115:$3.0900
IGZ75N65H5XKSA1
DISTI # IGZ75N65H5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube - Rail/Tube (Alt: IGZ75N65H5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$3.1900
  • 2400:$3.1900
  • 960:$3.3900
  • 480:$3.4900
  • 240:$3.5900
IGZ75N65H5XKSA1
DISTI # SP001160054		Infineon Technologies AGTrans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube (Alt: SP001160054)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.6900
  • 500:€2.7900
  • 100:€2.8900
  • 50:€2.9900
  • 25:€3.0900
  • 10:€3.3900
  • 1:€4.1900
IGZ75N65H5XKSA1
DISTI # 726-IGZ75N65H5XKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS0
  • 1:$6.0400
  • 10:$5.4600
  • 25:$5.2000
  • 100:$4.5200
  • 250:$4.3200
  • 500:$3.9300
IGZ75N65H5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 119A I(C), 650V V(BR)CES, N-Channel
RoHS: Not Compliant		4170
  • 1000:$2.8800
  • 500:$3.0300
  • 100:$3.1600
  • 25:$3.2900
  • 1:$3.5500
IGZ75N65H5XKSA1
DISTI # IGZ75N65H5		Infineon Technologies AG650V 119A 395W TO247-4
RoHS: Compliant		235
  • 1:€6.6500
  • 10:€3.6500
  • 50:€2.6500
  • 100:€2.5500
Image Part # Description
IGZ75N65H5XKSA1

Mfr.#: IGZ75N65H5XKSA1

OMO.#: OMO-IGZ75N65H5XKSA1

 IGBT Transistors IGBT PRODUCTS
IGZ75N65H5

Mfr.#: IGZ75N65H5

OMO.#: OMO-IGZ75N65H5-1190

 650V,85A,High Speed IGBT
IGZ75N65H5XKSA1

Mfr.#: IGZ75N65H5XKSA1

OMO.#: OMO-IGZ75N65H5XKSA1-INFINEON-TECHNOLOGIES

 IGBT 650V 75A SGL TO-247-4
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of IGZ75N65H5XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.00
$0.00
10
$0.00
$0.00
100
$0.00
$0.00
500
$0.00
$0.00
1000
$0.00
$0.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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