TK10J80E,S1E

TK10J80E,S1E
Mfr. #:
TK10J80E,S1E
Manufacturer:
Toshiba
Description:
MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN
Lifecycle:
New from this manufacturer.
Datasheet:
TK10J80E,S1E Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK10J80E,S1E DatasheetTK10J80E,S1E Datasheet (P4-P6)TK10J80E,S1E Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-3PN-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
10 A
Rds On - Drain-Source Resistance:
700 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
46 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
250 W
Configuration:
Single
Channel Mode:
Enhancement
Height:
20 mm
Length:
15.5 mm
Series:
TK10J80E
Transistor Type:
1 N-Channel
Width:
4.5 mm
Brand:
Toshiba
Fall Time:
35 ns
Product Type:
MOSFET
Rise Time:
40 ns
Factory Pack Quantity:
25
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
140 ns
Typical Turn-On Delay Time:
80 ns
Unit Weight:
0.245577 oz
Tags
TK10J, TK10, TK1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 800V 10A 3-Pin TO-3P(N)
***i-Key
MOSFET N-CH 800V TO-3PN
***
MOSFET TRAN TO-3PN(OS)
Part # Mfg. Description Stock Price
TK10J80E,S1E(S
DISTI # C1S751201055196
Toshiba America Electronic ComponentsTrans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-3PN
RoHS: Not Compliant
25
  • 10:$6.5400
TK10J80E,S1E
DISTI # TK10J80ES1E-ND
Toshiba America Electronic ComponentsMOSFET N-CH 800V TO-3PN
RoHS: Compliant
Min Qty: 25
Container: Tube
Temporarily Out of Stock
  • 25:$2.7348
TK10J80E,S1E
DISTI # TK10J80E,S1E
Toshiba America Electronic ComponentsTrans MOSFET N-CH 800V 10A 3-Pin TO-3P(N) - Rail/Tube (Alt: TK10J80E,S1E)
RoHS: Compliant
Min Qty: 25
Container: Tube
Americas - 0
  • 25:$1.6900
  • 50:$1.5900
  • 100:$1.4900
  • 150:$1.3900
  • 250:$1.3900
TK10J80E,S1E
DISTI # 757-TK10J80ES1E
Toshiba America Electronic ComponentsMOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN
RoHS: Compliant
0
  • 1:$3.1000
  • 10:$2.4900
  • 100:$2.2700
  • 250:$2.0500
  • 500:$1.8400
  • 1000:$1.5500
  • 2500:$1.4700
  • 5000:$1.4200
Image Part # Description
TK10J80E,S1E

Mfr.#: TK10J80E,S1E

OMO.#: OMO-TK10J80E-S1E

MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN
TK10J80E,S1E

Mfr.#: TK10J80E,S1E

OMO.#: OMO-TK10J80E-S1E-TOSHIBA-SEMICONDUCTOR-AND-STOR

MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN
TK10J80E,S1E(S

Mfr.#: TK10J80E,S1E(S

OMO.#: OMO-TK10J80E-S1E-S-1190

Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-3PN
TK10J80ES1E-ND

Mfr.#: TK10J80ES1E-ND

OMO.#: OMO-TK10J80ES1E-ND-1190

New and Original
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of TK10J80E,S1E is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.10
$3.10
10
$2.49
$24.90
100
$2.27
$227.00
250
$2.05
$512.50
500
$1.84
$920.00
1000
$1.55
$1 550.00
2500
$1.47
$3 675.00
5000
$1.42
$7 100.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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