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RJH1CF7RDPQ-80#T2

RJH1CF7RDPQ-80#T2
Mfr. #:
RJH1CF7RDPQ-80#T2
Manufacturer:
Renesas Electronics
Description:
IGBT Transistors IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
RJH1CF7RDPQ-80#T2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RJH1CF7RDPQ-80#T2 DatasheetRJH1CF7RDPQ-80#T2 Datasheet (P4-P6)RJH1CF7RDPQ-80#T2 Datasheet (P7)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Renesas Electronics
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Packaging:
Tube
Brand:
Renesas Electronics
Moisture Sensitive:
Yes
Product Type:
IGBT Transistors
Factory Pack Quantity:
1
Subcategory:
IGBTs
Tags
RJH1CF7RD, RJH1CF7R, RJH1CF7, RJH1CF, RJH1C, RJH1, RJH
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip 1.2KV 60A 9999-Pin(9999+Tab) TO-247
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Trans IGBT Chip N-CH 1200V 60A 349000mW 3-Pin(3+Tab) TO-247 Tube, PG-TO247-3, RoHS
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Transistor, Igbt, 1.2Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:349W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins;rohs Compliant: Yes
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
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IGBT, N 1200V 30A TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.75V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins
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TRANSISTOR, IGBT, 2V, 60A, TO-247-3;
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IGBT TRENCH/FS 1200V 60A TO247
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Insulated Gate Bipolar Transistor
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Igbt, Single, 1.2Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:452W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Onsemi NGTB30N120FL2WG
***ark
Igbt Single Transistor, 50 A, 2 V, 385 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes
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Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 385W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***et
Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247
***nell
IGBT, SINGLE, 1.35KV, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 349W; Collector Emitter Voltage V(br)ceo: 1.35k; Available until stocks are exhausted
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
Image Part # Description
RJH1CF7RDPQ-80#T2

Mfr.#: RJH1CF7RDPQ-80#T2

OMO.#: OMO-RJH1CF7RDPQ-80-T2

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Mfr.#: RJH1CF7R

OMO.#: OMO-RJH1CF7R-1190

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Mfr.#: RJH1CF7RDPQ

OMO.#: OMO-RJH1CF7RDPQ-1190

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RJH1CF7RDPQ-80

Mfr.#: RJH1CF7RDPQ-80

OMO.#: OMO-RJH1CF7RDPQ-80-1190

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Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of RJH1CF7RDPQ-80#T2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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