IRF3717TRPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

20 A

Rds On - Drain-Source Resistance:

4.4 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.45 V

Qg - Gate Charge:

33 nC

Pd - Power Dissipation:

2.5 W

Configuration:

Single

Packaging:

Reel

Height:

1.75 mm

Length:

4.9 mm

Transistor Type:

1 N-Channel

Width:

3.9 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

57 S

Fall Time:

6 ns

Product Type:

MOSFET

Rise Time:

14 ns

Factory Pack Quantity:

4000

Subcategory:

MOSFETs

Part # Aliases:

IRF3717TRPBF SP001559604

Unit Weight:

0.019048 oz

Tags

IRF3717TRP, IRF3717T, IRF3717, IRF371, IRF37, IRF3, IRF