IRF3717

IRF3717TRPBF vs IRF3717PBF vs IRF3717PBF-1

 
PartNumberIRF3717TRPBFIRF3717PBFIRF3717PBF-1
DescriptionMOSFET MOSFT 20V 20A 4.4mOhm 22nC QgMOSFET 20V 1 N-CH HEXFET 4.4mOhms 22nC
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current20 A20 A-
Rds On Drain Source Resistance4.4 mOhms5.7 mOhms-
Vgs th Gate Source Threshold Voltage2.45 V--
Qg Gate Charge33 nC22 nC-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
PackagingReelTube-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
Transistor Type1 N-Channel1 N-Channel-
Width3.9 mm3.9 mm-
BrandInfineon / IRInfineon Technologies-
Forward Transconductance Min57 S--
Fall Time6 ns6 ns-
Product TypeMOSFETMOSFET-
Rise Time14 ns14 ns-
Factory Pack Quantity40003800-
SubcategoryMOSFETsMOSFETs-
Part # AliasesIRF3717TRPBF SP001559604SP001564392-
Unit Weight0.019048 oz0.019048 oz-
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
Type-HEXFET Power MOSFET-
Typical Turn Off Delay Time-15 ns-
Typical Turn On Delay Time-12 ns-
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF3717TRPBF MOSFET MOSFT 20V 20A 4.4mOhm 22nC Qg
Infineon Technologies
Infineon Technologies
IRF3717PBF MOSFET 20V 1 N-CH HEXFET 4.4mOhms 22nC
IRF3717TRPBF. New and Original
IRF3717TRPBF-CUT TAPE New and Original
IRF3717PBF-1 New and Original
Infineon Technologies
Infineon Technologies
IRF3717TR MOSFET N-CH 20V 20A 8-SOIC
IRF3717 MOSFET N-CH 20V 20A 8-SOIC
IRF3717PBF MOSFET N-CH 20V 20A 8-SOIC
IRF3717TRPBF MOSFET N-CH 20V 20A 8-SOIC
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