SIHP7N60E-GE3

SIHP7N60E-GE3
Mfr. #:
SIHP7N60E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs TO-220AB
Lifecycle:
New from this manufacturer.
Datasheet:
SIHP7N60E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP7N60E-GE3 DatasheetSIHP7N60E-GE3 Datasheet (P4-P6)SIHP7N60E-GE3 Datasheet (P7-P8)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220AB-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
609 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
600 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
20 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
78 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
15.49 mm
Length:
10.41 mm
Series:
E
Width:
4.7 mm
Brand:
Vishay / Siliconix
Fall Time:
14 ns
Product Type:
MOSFET
Rise Time:
13 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
13 ns
Unit Weight:
0.211644 oz
Tags
SIHP7, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220AB
***et Europe
Trans MOSFET N-CH 600V 7A 3-Pin TO-220AB
***i-Key
MOSFET N-CH 600V 7A TO-220AB
***ure Electronics
MOSFET 600V 600MOHM@10V 7A N-CH E-SRS
***ark
N-CHANNEL 600V
***ment14 APAC
MOSFET, N-CH, 600V, 7A, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***nell
MOSFET, N-CH, 600V, 7A, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Part # Mfg. Description Stock Price
SIHP7N60E-GE3
DISTI # V99:2348_09218752
Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant
1000
  • 10000:$0.8228
  • 5000:$0.8506
  • 2500:$0.8788
  • 1000:$0.9266
  • 500:$1.0670
  • 100:$1.1938
  • 10:$1.4481
  • 1:$1.7121
SIHP7N60E-GE3
DISTI # SIHP7N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 7A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 1000:$1.0766
  • 500:$1.2994
  • 100:$1.6706
  • 10:$2.0790
  • 1:$2.3000
SIHP7N60E-GE3
DISTI # 31050726
Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant
1000
  • 100:$1.3706
  • 25:$1.3858
  • 10:$1.4872
  • 8:$1.7250
SIHP7N60E-GE3
DISTI # SIHP7N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP7N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$0.9819
  • 2000:$0.9529
  • 4000:$0.9139
  • 6000:$0.8889
  • 10000:$0.8649
SIHP7N60E-GE3
DISTI # 62W0522
Vishay IntertechnologiesPower MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes365
  • 1:$2.1000
  • 10:$1.7500
  • 25:$1.6200
  • 50:$1.4800
  • 100:$1.3500
  • 500:$1.1900
  • 1000:$1.1300
SIHP7N60E-GE3
DISTI # 78-SIHP7N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant
1000
  • 1:$2.1000
  • 10:$1.7500
  • 100:$1.3500
  • 500:$1.1900
  • 1000:$1.1300
SIHP7N60E-E3
DISTI # 78-SIHP7N60E-E3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant
0
  • 1000:$0.9790
  • 3000:$0.9120
  • 5000:$0.8780
SIHP7N60E-GE3SIL 600
    SIHP7N60E-GE3Vishay Intertechnologies 1000
      SIHP7N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant
      Europe - 600
        SIHP7N60E-GE3Vishay Intertechnologies 194
          SIHP7N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
          RoHS: Compliant
          Americas -
            SIHP7N60E-GE3
            DISTI # 2283640
            Vishay IntertechnologiesMOSFET, N-CH, 600V, 7A, TO220AB
            RoHS: Compliant
            415
            • 5:£1.8200
            • 25:£1.6000
            • 100:£1.2300
            • 250:£1.1500
            • 500:£1.0700
            SIHP7N60E-GE3
            DISTI # C1S803601964575
            Vishay IntertechnologiesMOSFETs
            RoHS: Compliant
            1000
            • 100:$1.3706
            • 25:$1.3858
            • 10:$1.4872
            SIHP7N60E-GE3
            DISTI # 2283640
            Vishay IntertechnologiesMOSFET, N-CH, 600V, 7A, TO220AB
            RoHS: Compliant
            365
            • 1:$3.3200
            • 10:$2.7800
            • 100:$2.1400
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            Availability
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            935
            On Order:
            2918
            Enter Quantity:
            Current price of SIHP7N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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