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IXFN70N100X

IXFN70N100X
Mfr. #:
IXFN70N100X
Manufacturer:
Littelfuse
Description:
MOSFET 1000V 65A SOT-227 Power MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IXFN70N100X Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IXFN70N100X more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-227-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1000 V
Id - Continuous Drain Current:
65 A
Rds On - Drain-Source Resistance:
89 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
350 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1200 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HiPerFET
Packaging:
Tube
Series:
X-Class
Transistor Type:
1 N-Channel
Brand:
IXYS
Forward Transconductance - Min:
34 S
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
20 ns
Factory Pack Quantity:
10
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
127 ns
Typical Turn-On Delay Time:
48 ns
Tags
IXFN70, IXFN7, IXFN, IXF
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
X-Class 850V - 1000V Power MOSFETs with HiPerFET™
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Part # Mfg. Description Stock Price
IXFN70N100X
DISTI # IXFN70N100X-ND		IXYS CorporationMOSFET 1KV 65A ULTRA JCT SOT227
RoHS: Compliant
Min Qty: 1
Container: Tube		25In Stock
  • 120:$39.2550
  • 30:$41.8720
  • 10:$45.2740
  • 1:$48.4100
IXFN70N100X
DISTI # 747-IXFN70N100X		IXYS CorporationMOSFET 1000V 65A SOT-227 Power MOSFET
RoHS: Compliant		40
  • 1:$48.4100
  • 5:$46.7200
  • 10:$45.2800
  • 25:$41.8700
  • 50:$40.6300
  • 100:$39.2500
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Availability
Stock:
28
On Order:
2011
Enter Quantity:
Current price of IXFN70N100X is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$48.41
$48.41
5
$46.72
$233.60
10
$45.28
$452.80
25
$41.87
$1 046.75
50
$40.63
$2 031.50
100
$39.25
$3 925.00
250
$36.64
$9 160.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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