2N6229

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

100 V

Collector- Base Voltage VCBO:

100 V

Emitter- Base Voltage VEBO:

7 V

Collector-Emitter Saturation Voltage:

2 V

Gain Bandwidth Product fT:

1 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

100

Packaging:

Tray

Brand:

Microchip / Microsemi

Continuous Collector Current:

10 A

DC Collector/Base Gain hfe Min:

25

Pd - Power Dissipation:

150 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

2N622, 2N62, 2N6