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LMG3411R070RWHR

LMG3411R070RWHR
Mfr. #:
LMG3411R070RWHR
Description:
Gate Drivers SMART 70MOHM GAN FET WITH DRIVER
Lifecycle:
New from this manufacturer.
Datasheet:
LMG3411R070RWHR Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
LMG3411R070RWHR more Information LMG3411R070RWHR Product Details
Product Attribute
Attribute Value
Manufacturer:
Texas Instruments
Product Category:
Gate Drivers
RoHS:
Y
Product:
MOSFET Gate Drivers
Type:
High Side, Low Side
Mounting Style:
SMD/SMT
Package / Case:
QFN-32
Number of Drivers:
1 Driver
Number of Outputs:
1 Output
Rise Time:
15 ns
Fall Time:
4.2 ns
Supply Voltage - Min:
9.5 V
Supply Voltage - Max:
18 V
Propagation Delay - Max:
36 ns
Operating Supply Current:
43 mA
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 125 C
Series:
LMG3411R070
Packaging:
Reel
Operating Temperature Range:
- 40 C to + 125 C
Output Voltage:
5 V
Technology:
Si
Brand:
Texas Instruments
Maximum Turn-Off Delay Time:
10 ns
Maximum Turn-On Delay Time:
12 ns
Moisture Sensitive:
Yes
Product Type:
Gate Drivers
Rds On - Drain-Source Resistance:
70 mOhms
Factory Pack Quantity:
2000
Subcategory:
PMIC - Power Management ICs
Tags
LMG3411, LMG341, LMG34, LMG3, LMG
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    O***v
    O***v
    RU

    The product corresponds to the description

    2019-05-08
    K***E
    K***E
    KR

    cheap and good working.

    2019-08-06
    A***A
    A***A
    ID

    the super capacitor was very powerfull..good product..recommended seller..awesome!

    2019-06-27
***AS INSTRUMENTS INCORPORATED
The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
***XS
The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
LMG3410R070 600V 70mΩ GaN Power Stage
OMO Electronic LMG3410R070 600V 70mΩ GaN Power Stage with integrated driver and protection offers advantages over silicon MOSFETs. These include ultra-low input and output capacitance. Features include zero reverse recovery reducing switching losses by as much as 80% and low switch node ringing to decreasing EMI.
Image Part # Description
LMG3411R070RWHR

Mfr.#: LMG3411R070RWHR

OMO.#: OMO-LMG3411R070RWHR

 Gate Drivers SMART 70MOHM GAN FET WITH DRIVER
LMG3411EVM-029

Mfr.#: LMG3411EVM-029

OMO.#: OMO-LMG3411EVM-029-TEXAS-INSTRUMENTS

 LMG3411EVM-029 HALF BRIDGE
LMG3411R070RWHT

Mfr.#: LMG3411R070RWHT

OMO.#: OMO-LMG3411R070RWHT-TEXAS-INSTRUMENTS

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Mfr.#: LMG3411EVM-018

OMO.#: OMO-LMG3411EVM-018-1190

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Availability
Stock:
Available
On Order:
1500
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Current price of LMG3411R070RWHR is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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