IRF3709PBF

Mfr. #:: IRF3709PBF
Manufacturer:: Infineon / IR
Description:: MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF3709PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF3709PBF Datasheet IRF3709PBF Datasheet (P4-P6)IRF3709PBF Datasheet (P7-P9)IRF3709PBF Datasheet (P10-P12)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 90 A

Rds On - Drain-Source Resistance:: 10.5 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 27 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 120 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Type:: Smps MOSFET

Width:: 4.4 mm

Brand:: Infineon / IR

Forward Transconductance - Min:: 53 S

Fall Time:: 9.2 ns

Product Type:: MOSFET

Rise Time:: 171 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 21 ns

Typical Turn-On Delay Time:: 11 ns

Part # Aliases:: SP001570060

Unit Weight:: 0.211644 oz

Tags: IRF3709, IRF370, IRF37, IRF3, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF3709PBF Description

***ure Electronics: Single N-Channel 30 V 9 mOhm 41 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***et: Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB

***(Formerly Allied Electronics): MOSFET, 30V, 90A, 9 MOHM, 27 NC QG, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 30V, 90A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:120W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Junction to Case Thermal Resistance A:1.04°C/W; On State resistance @ Vgs = 10V:9ohm; Package / Case:TO-220AB; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***ark: MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V

***(Formerly Allied Electronics): MOSFET, N Ch., 30V, 105A, 6 MOHM, 23 NCQG, TO-220AB, Pb-Free

***ure Electronics: Single N-Channel 30 V 6 mOhm 23 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop Global: Trans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

***ark: N Channel Mosfet, 30V, 105A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.006Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, 30V, 105A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Junction to Case Thermal Resistance A:1.32°C/W; On State resistance @ Vgs = 10V:6ohm; Package / Case:TO-220AB; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:420A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V

***ure Electronics: Single N-Channel 30 V 7 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop Global: Trans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube

***(Formerly Allied Electronics): MOSFET, 30V, 100A, 7 MOHM, 40 NC QG, LOGIC LEVEL, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 180 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 30V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:116A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

***emi: N-Channel PowerTrench® MOSFET 30V, 114A, 5.3mΩ

***Yang: Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***ter Electronics: 30V,114A,5.3 OHM,N-CH,TO220,POWER TRENCH MOSFET

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***p One Stop Global: Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***ark: RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET

***Yang: Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***emi: N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ

***ure Electronics: N-Channel 30 V 5.9 mOhm PowerTrench Mosfet - TO-220AB

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Market price

Part #	Mfg.	Description	Stock	Price
IRF3709PBF DISTI # 32628577	Infineon Technologies AG	Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	3000	1000:$0.5944
IRF3709PBF DISTI # IRF3709PBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 90A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	2247In Stock	1000:$0.6891 100:$1.0566 25:$1.2864 10:$1.3550 1:$1.5200
IRF3709PBF DISTI # V36:1790_13890136	Infineon Technologies AG	Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	0	3000000:$0.5096 1500000:$0.5102 300000:$0.5931 30000:$0.7689 3000:$0.8000
IRF3709PBF DISTI # SP001570060	Infineon Technologies AG	Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB (Alt: SP001570060) RoHS: Compliant Min Qty: 50	Europe - 1100	500:€0.4579 300:€0.4929 200:€0.5349 100:€0.5829 50:€0.7129
IRF3709PBF DISTI # IRF3709PBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3709PBF) RoHS: Compliant Min Qty: 3000 Container: Tube	Americas - 0	30000:$0.4439 15000:$0.4519 9000:$0.4679 6000:$0.4859 3000:$0.5039
IRF3709PBF DISTI # IRF3709PBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRF3709PBF) RoHS: Compliant Min Qty: 695 Container: Bulk	Americas - 0	6950:$0.5589 3475:$0.5689 2085:$0.5889 1390:$0.6109 695:$0.6339
IRF3709PBF DISTI # 63J7275	Infineon Technologies AG	Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7275) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0
IRF3709PBF DISTI # 38K2786	Infineon Technologies AG	MOSFET Transistor, N Channel, 90 A, 30 V, 9 mohm, 10 V, 3 V RoHS Compliant: Yes	14	10000:$0.6240 2500:$0.6470 1000:$0.7300 500:$0.9240 100:$1.0500 10:$1.3600 1:$1.6000
IRF3709PBF DISTI # 70018204	Infineon Technologies AG	MOSFET,30V,90A,9 MOHM,27 NC QG,TO-220AB RoHS: Compliant	0	3000:$2.4200 6000:$2.3720 15000:$2.2990 30000:$2.2020 75000:$2.0570
IRF3709PBF DISTI # 942-IRF3709PBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC RoHS: Compliant	3197	1:$1.4400 10:$1.2300 100:$0.9410 500:$0.8320 1000:$0.6570 2000:$0.5820 10000:$0.5610
IRF3709PBF	Infineon Technologies AG	Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	1500	1000:$0.5800 500:$0.6100 100:$0.6300 25:$0.6600 1:$0.7100
IRF3709PBF DISTI # IRF3709PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,90A,120W,TO220AB	39	100:$0.7000 10:$0.7700 3:$0.9400 1:$1.0300
IRF3709PBF DISTI # 8657610	Infineon Technologies AG	MOSFET, N, 30V, 90A, TO-220 RoHS: Compliant	14	10:$1.8500 1:$2.1700
IRF3709PBF DISTI # 8657610	Infineon Technologies AG	MOSFET, N, 30V, 90A, TO-220	36	500:£0.7300 250:£0.7310 100:£0.7320 10:£1.0100 1:£1.2700
IRF3709PBF DISTI # XSKDRABV0021344	Infineon Technologies AG	PowerField-EffectTransistor,75AI(D),75V,0.013ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET RoHS: Compliant	900 in Stock0 on Order	900:$0.7386

Image	Part #	Description
	Mfr.#: AD7771BCPZ OMO.#: OMO-AD7771BCPZ	Analog to Digital Converters - ADC Eight 24B 128ksps SD-ADC PGA SRC
	Mfr.#: SMAJ22A OMO.#: OMO-SMAJ22A	TVS Diodes / ESD Suppressors 400W 22V 5% Uni-Directional
	Mfr.#: RB085BM-90FHTL OMO.#: OMO-RB085BM-90FHTL	Schottky Diodes & Rectifiers 90V Vr 10A Io SBD TO-252(DPAK) 5A
	Mfr.#: STM32F446MEY6TR OMO.#: OMO-STM32F446MEY6TR	ARM Microcontrollers - MCU 16/32-BITS MICROS
	Mfr.#: LTC6992HS6-1#TRPBF OMO.#: OMO-LTC6992HS6-1-TRPBF	Switching Controllers PWM with 0% to 100% Pulse Width Control
	Mfr.#: CRCW06034K70FKEAC OMO.#: OMO-CRCW06034K70FKEAC	Thick Film Resistors - SMD 1/10Watt 4.7Kohms 1% Commercial Use
	Mfr.#: CRCW0603150RFKEAC OMO.#: OMO-CRCW0603150RFKEAC	Thick Film Resistors - SMD 1/10Watt 150ohms 1% Commercial Use
	Mfr.#: SMAJ22A OMO.#: OMO-SMAJ22A-LITTELFUSE	TVS Diodes - Transient Voltage Suppressors 22Vr 400W 11.3A 5% UniDirectional
	Mfr.#: STM32F446MEY6TR OMO.#: OMO-STM32F446MEY6TR-STMICROELECTRONICS	IC MCU 32BIT 512KB FLASH 81WLCSP STM32F4
	Mfr.#: RB085BM-90FHTL OMO.#: OMO-RB085BM-90FHTL-ROHM-SEMI	SCHOTTKY BARRIER DIODE

IRF3709PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes