IRFZ34EPBF

IRFZ34EPBF
Mfr. #:
IRFZ34EPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 60V 1 N-CH HEXFET 7mOhms 30nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRFZ34EPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
28 A
Rds On - Drain-Source Resistance:
42 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
20 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
68 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Transistor Type:
1 N-Channel
Type:
HEXFET Power MOSFET
Width:
4.4 mm
Brand:
Infineon / IR
Fall Time:
30 ns
Product Type:
MOSFET
Rise Time:
30 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
22 ns
Typical Turn-On Delay Time:
5.1 ns
Part # Aliases:
SP001567916
Unit Weight:
0.211644 oz
Tags
IRFZ34, IRFZ3, IRFZ, IRF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.042Ohm;ID 28A;TO-220AB;PD 68W;VGS +/-20V
***ernational Rectifier
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***ical
Trans MOSFET N-CH 60V 28A 3-Pin (3+Tab) TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 28A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):42mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 60V, 28A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:60V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:68W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:28A; Current Temperature:25°C; Device Marking:IRFZ34EPBF; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:68W; Power Dissipation Pd:68W; Pulse Current Idm:112A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
IRFZ34EPBF
DISTI # IRFZ34EPBF-ND
Infineon Technologies AGMOSFET N-CH 60V 28A TO-220AB
RoHS: Compliant
Min Qty: 3000
Container: Tube
Limited Supply - Call
    IRFZ34EPBF
    DISTI # 70017050
    Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 60V,RDS(ON) 0.042Ohm,ID 28A,TO-220AB,PD 68W,VGS +/-20V
    RoHS: Compliant
    0
    • 1:$1.6000
    • 2:$1.5680
    • 5:$1.5200
    • 10:$1.4560
    • 25:$1.3600
    IRFZ34EPBFInternational Rectifier 
    RoHS: Compliant
    450
      IRFZ34EPBF
      DISTI # 8650187
      Infineon Technologies AGMOSFET, N, 60V, 28A, TO-220
      RoHS: Compliant
      0
      • 1000:$1.3100
      • 500:$1.3600
      • 250:$1.4300
      • 100:$1.5100
      • 10:$1.9600
      • 1:$2.7900
      Image Part # Description
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      Availability
      Stock:
      Available
      On Order:
      1000
      Enter Quantity:
      Current price of IRFZ34EPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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